Introduction:

The LFL-SF-T adopts an advanced single longitudinal mode (SLM) resonator design, which can stably output pure single-mode lasers with a high-order mode suppression ratio of >40dB. The beam quality factor M² is ≤1.2, approaching the diffraction limit of an ideal Gaussian beam (M²=1). Its spectral linewidth is extremely narrow (<1MHz FWHM). Within the ambient temperature range of 10~35℃, the peak wavelength drift can be controlled within ±0.05nm, achieving ppm-level wavelength stability, which far exceeds the performance indicators of ordinary industrial lasers. This high-purity beam features concentrated energy density and uniform transverse mode distribution. After focusing, it can form a tiny spot with a diameter of <5μm, providing an optical foundation for high-precision detection.

Thanks to the high beam quality with M² ≤ 1.2, in semiconductor wafer defect detection, a resolution of 0.1μm level can be achieved, and the detection efficiency is improved by more than 40% compared with traditional multimode laser systems. The extremely narrow spectral linewidth (< 1MHz) makes it an ideal light source for Raman spectroscopy analysis, increasing the signal-to-noise ratio of characteristic peaks by 3 times and effectively shortening the time for material composition identification. In holographic interferometry, wavelength stability ensures the repeatability of nanoscale displacement measurement, and the confidence level of experimental data is increased to 99.9%.

Features:

• High-precision single-mode laser output characteristics
• Innovative split structure design
• Intelligent temperature control and stability guarantee system
• Full-dimensional safety protection mechanism

Dimension: