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Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection material
This indium gallium arsenide detector has a photosensitive range covering 800~2600nm and is commonly used in near and mid-infrared measurements. As an amplifying detector, it features 8 adjustable gain levels to achieve quantitative photoelectric conversion. It also has a wide dynamic range, making it suitable for various infrared optoelectronic development scenarios, with extensive applications. Additionally, it boasts excellent performance and high cost-effectiveness, and offers comprehensive technical support and non-standard customization services.
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