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InGaAs-AG PHOTODETECTOR
Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection material
- Wide coverage of spectral extension
- Amplification type + adjustable gain
- Low noise and high precision
- High compatibility and easy integration
- Stable adaptation to multiple environments
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Overview
Specifcations
Adjustable gain parameters
Responsivity
Introduction:
This indium gallium arsenide detector has a photosensitive range covering 800~2600nm and is commonly used in near and mid-infrared measurements. As an amplifying detector, it features 8 adjustable gain levels to achieve quantitative photoelectric conversion. It also has a wide dynamic range, making it suitable for various infrared optoelectronic development scenarios, with extensive applications. Additionally, it boasts excellent performance and high cost-effectiveness, and offers comprehensive technical support and non-standard customization services.
Features:
- Indium gallium arsenide material, for near and mid-infrared measurement in the 800~2600nm range
- Amplification type, 8 adjustable gain levels, supporting quantitative photoelectric conversion
- Wide dynamic range, suitable for various infrared optoelectronic development scenarios
- Excellent performance, high cost-effectiveness, providing comprehensive technical support
- Supporting non-standard customization
Dimension:
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InGaAs-AG PHOTODETECTOR
InGaAs-0.8/2.2um-1X1mm-AG8
Light-sensitive range: 800~2200nm (near and mid-infrared).
InGaAs-AG PHOTODETECTOR
InGaAs-0.8/2.6um-1X1mm-AG8
Light-sensitive range: 800~2600nm (infrared extends to mid-infrared).
