Introduction:

This device has a spectral response range covering 350~1100nm, featuring both optimized near-infrared wavelength response and low dark current characteristics. It is suitable for photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.

It accurately converts near-infrared light signals into electrical signals, especially overcoming the shortcoming of ordinary silicon PIN photodiodes in their response to the near-infrared band, making them suitable for scenarios such as near-infrared detection, communication, and sensing.

Features:

• Wire bonding with low resistance and low loss
  • Near-infrared custom anti-reflection coating to prevent stray light
  • Multi-chip array with precise spacing control
  • Package protective layer selected according to needs
  • Low junction capacitance, suitable for high-frequency signals
  • Low temperature drift to ensure data consistency

Dimension: