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Near-Infrared Enhanced Silicon PIN Photodiode (COB Package)

Part Number: PDCC34-501

It has better low-light detection accuracy, suitable for detecting extremely weak light signals at the μW level; it has a faster high-frequency response speed, capable of capturing pulsed near-infrared signals below 1MHz (such as infrared remote control coding, short-distance infrared communication feedback).



It has strong versatility in the medium and short near-infrared range, and can be adapted to multiple near-infrared detection scenarios without replacing components.

Caution
  • Product image is for representative purposes only and not reflective of every product available on this page.

Configured Specifications

Photosensitive Area Size (mm)5.8×5.8Window Material Resin
Dark Current (V_R=10mV, Typ./Max., pA)60/360Photosensitivity (Typ., A/W)0.43@633nm, 0.62@920nm
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)400/500Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)0.9
Unit Price
Total
Ship Date
TBD
Qty.
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Near-infrared enhanced silicon PIN photodiode (COB package)

PDCC100-501
The size of the photosensitive surface is 10×10mm.
Ships as soon as Same Day
Stock Items Included
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