Designed with the largest photosensitive surface, it has the optimal capability to capture large-area and strong light signals. It can cover a large detection area without the need for multiple chip arrays, reducing integration complexity.
Although it has relatively large dark current and junction capacitance, it is suitable for low-frequency strong light detection scenarios. It does not require high-frequency response optimization and is suitable for scenarios where the detection area requirement is higher than the response speed requirement.
| Photosensitive Area Size (mm) | 10×10 | Dark Current (Max, pA) | 800 |
| Junction Capacitance (Max, pF) | 1000 | Rise Time (μs) | 1.8 |
| Shunt Resistance (Min, GΩ) | 0.07 | Equivalent Noise Power (W/Hz¹/²) | 1.2×10⁻¹⁴ |
| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | TBD | |
| 10- | TBD |
