| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | $210.00 | TBD |
| 10- | $210.00 | TBD |

Advantages:
Excellent temperature uniformity ensures consistent processing results across all areas of the wafer, improving product quality. Strong compatibility allows adaptation to wafers of different sizes to meet various production needs, while precise gas control can accurately regulate the process environment.
Applications:
Widely used in the field of advanced integrated circuit manufacturing. In addition to being extensively used in RTA processes, it can also be applied to rapid thermal oxidation, rapid thermal nitridation, rapid thermal diffusion, rapid chemical vapor deposition, as well as metal silicide formation, epitaxial processes, etc. It is also suitable for scenarios such as phosphosilicate glass annealing, integrated circuit manufacturing, metal alloying, polysilicon annealing, carbide annealing, silicide annealing, etc.
| Cavity | Temperature range | Overall dimensions | Net weight |
|---|---|---|---|
| Quartz cavity | Heating on both upper and lower layers, with a maximum temperature of 1000℃ | 534mm×608mm×272mm | 42kg |
| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | $210.00 | TBD |
| 10- | $210.00 | TBD |