Si-APD-AG AV Photodetector

Silicon-based amplifying adjustable gain photodetection equipment

High-sensitivity weak light detection
Wide gain adjustment range
Multi-scenario adaptability
High ease of use

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Data Sheet

Overview

Introduction to the Si-APD-AG AV PHOTODETECTOR product and the product's dimension drawing:

This product utilizes the APD avalanche effect to enhance photoelectric conversion gain. It uses silicon as the detection material, with a photosensitive range of 400nm to 1100nm. It is an amplifying detector with 8 adjustable gain levels, featuring a wide dynamic range, excellent performance, and high cost-effectiveness. It provides comprehensive technical support and non-standard customization services, and is suitable for various optoelectronic development scenarios such as visible light and near-infrared light measurement.

Specifications

Core Common Parameter Table of 400~1100nm Silicon - based Amplifying and Adjustable - gain APD:

Parameter Category	Parameter Content
Detector Material	Silicon (Si)
Product Type	Avalanche, amplifying, adjustable - gain photodetector
Spectral Response Range	400~1100nm, suitable for visible and near - infrared light measurement
Gain Adjustment	Supports 0~70dB, eight - step quantitative adjustable gain, 10dB per step
Electrical Parameters	APD bias voltage adjustment range 0~150V (some 0~400V); APD gain M value 0~50 (some 0~400); Signal amplitude 0~10V under Hi - Z load, 0~5V under 50Ω load
Environmental Parameters	Operating temperature 10~40℃, storage temperature -20~70℃
Dimensions	2.78"×2.21"×1.20" (70.6mm×56.2mm×30.5mm), net weight 0.1kg
Interfaces	Power supply interface RSMV3 FEMALE LUMBERG; Signal interface BNC female connector; Mounting interface M4×2; Optical interfaces SM1×1, SM0.5×1
Standard Accessories	High - precision linear power supply, BNC - BNC signal cable

Adjustable Gain Parameters

Eight-speed quantitatively adjustable gain parameters:

	0dB	10dB	20dB	30dB
Gain (Hi-Z)	1.51×10³ V/A	4.75×10³ V/A	1.5×10⁴ V/A	4.75×10⁴ V/A
Gain (50Ω)	0.75×10³ V/A	2.38×10³ V/A	0.75×10⁴ V/A	2.38×10⁴ V/A
Bandwidth (BW)	12MHz	1.6MHz	1MHz	260kHz
Noise (RMS)	258μV	192μV	207μV	211μV
	40dB	50dB	60dB	70dB
Gain (Hi-Z)	1.51×10⁵ V/A	4.75×10⁵ V/A	1.5×10⁵ V/A	4.75×10⁶ V/A
Gain (50Ω)	0.75×10⁵ V/A	2.38×10⁵ V/A	0.75×10⁶ V/A	2.38×10⁶ V/A
Bandwidth (BW)	90kHz	28kHz	9kHz	3kHz
Noise (RMS)	214μV	234μV	277μV	388μV
Signal Offset	±8mV(Typ.) ，±12mV(Max)