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Detectors
The VenusLab detector product series is core-positioned around the concept of "full-wavelength coverage, full-scenario adaptation, and high-precision output". It builds a complete product matrix spanning from basic optical signal monitoring to single-photon-level ultra-high-precision detection through 6 major segmented categories. Covering the full wavelength range from ultraviolet (185nm) to short-wave infrared (2500nm), with response speeds ranging from 50ns down to 1ns and detection sensitivity spanning from 0.1nW to the single-photon level, this series can meet the differentiated optical signal detection needs across multiple fields such as scientific research, industry, biomedicine, and security. It provides stable and accurate core sensing components for various light-related applications.
Photodetector
SiC-EUV-AG Photodetector
Solid-State Integrated EUV Detection Solution
- Fundamental Advantages Empowered by Wide-Bandgap Materials
- Precise Response Capability in the EUV Band
- Functional Upgrade of AG (Enhanced Gain)
- Stable Adaptability to Extreme Environments
SiC-VUV-AG Photodetector
Professional-grade Detection Benchmark for the VUV Band
- Material and Stability
- Anti-interference and Signal Purity
- Flexible Gain Adaptation
- Environmental Compatibility
- Performance and Services
SiC-AG Photodetector
Focus on industrial & research mid-UV accurate measurement needs
- Material-Enabled High Stability
- Pure Signal and Anti-Interference
- Flexible Gain for Full-Scenario Adaptation
- Multi-Scenario Compatible Design
- Long-Term Reliability and Low Maintenance
GaN-AG Photodetector
Optoelectronic devices based on wide bandgap semiconductors
- Full ultraviolet band coverage
- Flexible and adjustable gain
- High reliability and environmental adaptability
- Complete customization and supporting facilities
Si-30keV-AG X-Ray Detector
A dedicated radiation measurement device designed based on silicon (Si) material.
- Multi-ray compatibility
- High detection performance
- Vacuum environment adaptation
- Stable and durable
Si/InGaAs-Ps-S Photodetector
Constructed based on indium arsenide antimonide (InAsSb) material
- Ultra-high-speed response mechanism
- High-sensitivity detection capability
- Wide spectral adaptability
Si-PDA-Adj-G Photodetector
Silicon-based amplifying photodetector
- Wide spectral coverage and strong silicon-based compatibility
- Enlarged design with outstanding low-light detection capability
- Adjustable gain + bandwidth adaptation for wide scene compatibility
- High compatibility + standardization for easy integration
InGaAs-PDA-Adj-G Photodetector
Optoelectronic devices designed for the near-infrared band (800~1700nm)
- Material and spectrum adaptation
- Amplification type and adjustable gain
- Wide dynamic range and high bandwidth
- High compatibility and ease of use
- Stable and reliable
InGaAs-AG Photodetector
Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection material
- Wide coverage of spectral extension
- Amplification type + adjustable gain
- Low noise and high precision
- High compatibility and easy integration
- Stable adaptation to multiple environments
Si-PDA-Fix-G Photodetector
An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.
- Wide range of materials and spectral coverage
- Amplifying type + fixed gain design
- Balanced performance in both sensitivity and speed
- High compatibility and easy integration
- Strong scene adaptability
InGaAs-PDA-Fix-G Photodetector
Ear-infrared dedicated detection equipment
- Material and spectrum adaptation
- Amplification type + fixed gain design
- Performance balances sensitivity and speed
- High compatibility and stability
InGaAs-DET-Bd-Conv Photodetector
Low-cost, high-stability general-purpose photoelectric conversion devices
- Indium gallium arsenide wide spectrum
- Low bias, low noise, fast response
- Compatible with Thorlabs conventionally
- Stable, reliable and customizable
Si-DET-Bd-Hs PHOTODETECTOR
Silicon-based biased high-speed photoelectric conversion device
- Broad spectrum response adaptation
- High-speed response performance
- Low-noise and stable output
- Multiple coupling methods
- High compatibility
Si-APD-AG AV Photodetector
Silicon-based amplifying adjustable gain photodetection equipment
- High-sensitivity weak light detection
- Wide gain adjustment range
- Multi-scenario adaptability
- High ease of use
InGaAs-APDI-AG AV Photodetector
High-sensitivity photoelectric detection equipment for near-infrared light detection
- High-sensitivity weak light detection
- Wide gain adjustment range
- Multiple models to adapt to different needs
- Stable and reliable performance
Si-APD-Fix-G AV Photodetector
Silicon material photoelectric detection equipment
- High sensitivity and fixed gain
- Good compatibility
- Excellent performance and high cost-effectiveness
InGaAs-APD-Fix-G AV Photodetector
Professional avalanche photodetectors for near-infrared light detection
- High-sensitivity detection
- Fixed gain stability
- Specific wavelength band response
- Integrated amplification function
Photodiodes
Low Dark Current Silicon PIN Photodiode (TO18 packaging)
Core components in the field of medium and high-precision optical signal detection
- Excellent optical performance
- Strong structural adaptability
- Good environmental stability
Low Dark Current Silicon PIN Photodiode (COB packaging)
Core devices in the fields of low-light detection and precision measurement
- Wide-spectrum precise response
- Ultra-low noise detection capability
- High integration and mass production adaptability
- Industrial-grade environmental reliability
Low Dark Current Silicon PIN Photodiode (DIP package)
High-precision photodetection device based on silicon-based PIN structure
- Strong encapsulation adaptability
- Extremely low dark current
- Excellent environmental tolerance
Low Dark Current Silicon PIN Photodiode (TO packaging)
Silicon PIN structure photoelectric conversion device
- Flexible packaging adaptation
- Extremely low dark current
- Industrial-grade tolerance
- Fast response speed
Near-infrared enhanced silicon PIN photodiode (COB package)
Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared band
- Enhanced near-infrared response
• Low dark current and high precision
• Resistance to basic environments
• Friendly to mass production costs
Near-infrared enhanced silicon PIN photodiode (DIP package)
A passive photoelectric conversion functional device with a dual in-line package (DIP) through-hole package.
- Accurately capture weak signals
- Low dark current + high linearity
- Strong environmental adaptability + low-cost maintenance
Near-infrared enhanced silicon PIN photodiode (TO package)
Silicon-based PIN junction near-infrared optimized photoelectric conversion device.
- Highly efficient response in the near-infrared band
- High detection accuracy
- Fast response speed
- Wide scene adaptability
Silicon PIN photodiode in the ultraviolet to near-infrared band
A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.
- Accurate broadband response
- Low dark current with PIN structure
- High photoelectric linearity
- Stable environmental adaptability
Ultraviolet-enhanced Silicon PIN Photodiode (COB Package)
Optoelectronic conversion device with enhanced ultraviolet band response and COB package integration.
- High sensitivity in the ultraviolet band
- Strong integration adaptability
- Excellent environmental stability
UV-enhanced Silicon PIN Photodiode (DIP Package)
Optoelectronic conversion devices with DIP dual in-line package
- High-sensitivity detection in the ultraviolet band
- Engineering adaptability of DIP packaging
- Wide temperature range stability and low noise
- Plug-and-play compatibility for multiple scenarios
UV-enhanced Silicon PIN Photodiode (TO Package)
Optoelectronic conversion device with TO transistor package and metal hermetic sealing
- Metal hermetic packaging, stable over a wide temperature range
- High-sensitivity optimization in the ultraviolet band
- Low noise and fast response
- Industrial-grade environmental tolerance
- Flexible adaptation of glass/quartz windows
