InGaAs Photodetector
High-Speed Photodetector 5G
5GHz Broadband Low-Noise InGaAs Detector5GHz bandwidth, 60ps rising edge.800-1700nm NIR response.Built-in RF matching & bias circuits.Tolerates 100mW pulsed optical power.Standard FC/PC & SMA interfaces.
VenusLab Large-Area APD
Large-Area APD Low-Light Module200μm large target area, strong low-light captureStrong light protection, chip safety70MHz bandwidth, low noise and high signal-to-noise ratio1550nm compatible, 1100–1700nm responseTO8 hermetic seal, wide temperature stability
InGaAs-PDA-Adj-G Photodetector
Optoelectronic devices designed for the near-infrared band (800~1700nm)Material and spectrum adaptationAmplification type and adjustable gainWide dynamic range and high bandwidthHigh compatibility and ease of useStable and reliable
InGaAs-AG Photodetector
Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection materialWide coverage of spectral extensionAmplification type + adjustable gainLow noise and high precisionHigh compatibility and easy integrationStable adaptation to multiple environments
InGaAs-PDA-Fix-G Photodetector
Ear-infrared dedicated detection equipmentMaterial and spectrum adaptationAmplification type + fixed gain designPerformance balances sensitivity and speedHigh compatibility and stability
InGaAs-DET-Bd-Conv Photodetector
Low-cost, high-stability general-purpose photoelectric conversion devicesIndium gallium arsenide wide spectrumLow bias, low noise, fast responseCompatible with Thorlabs conventionallyStable, reliable and customizable
Photodiodes
Low Dark Current Silicon PIN Photodiode (TO18 packaging)
Core components in the field of medium and high-precision optical signal detectionExcellent optical performanceStrong structural adaptabilityGood environmental stability
Low Dark Current Silicon PIN Photodiode (COB packaging)
Core devices in the fields of low-light detection and precision measurementWide-spectrum precise responseUltra-low noise detection capabilityHigh integration and mass production adaptabilityIndustrial-grade environmental reliability
Low Dark Current Silicon PIN Photodiode (DIP package)
High-precision photodetection device based on silicon-based PIN structureStrong encapsulation adaptabilityExtremely low dark currentExcellent environmental tolerance
Low Dark Current Silicon PIN Photodiode (TO packaging)
Silicon PIN structure photoelectric conversion deviceFlexible packaging adaptationExtremely low dark currentIndustrial-grade toleranceFast response speed
Near-infrared enhanced silicon PIN photodiode (COB package)
Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared bandEnhanced near-infrared response• Low dark current and high precision• Resistance to basic environments• Friendly to mass production costs
Near-infrared enhanced silicon PIN photodiode (DIP package)
A passive photoelectric conversion functional device with a dual in-line package (DIP) through-hole package.Accurately capture weak signalsLow dark current + high linearityStrong environmental adaptability + low-cost maintenance
Near-infrared enhanced silicon PIN photodiode (TO package)
Silicon-based PIN junction near-infrared optimized photoelectric conversion device.Highly efficient response in the near-infrared bandHigh detection accuracyFast response speedWide scene adaptability
Silicon PIN photodiode in the ultraviolet to near-infrared band
A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.Accurate broadband responseLow dark current with PIN structureHigh photoelectric linearityStable environmental adaptability
Ultraviolet-enhanced Silicon PIN Photodiode (COB Package)
Optoelectronic conversion device with enhanced ultraviolet band response and COB package integration.High sensitivity in the ultraviolet bandStrong integration adaptabilityExcellent environmental stability
UV-enhanced Silicon PIN Photodiode (DIP Package)
Optoelectronic conversion devices with DIP dual in-line packageHigh-sensitivity detection in the ultraviolet bandEngineering adaptability of DIP packagingWide temperature range stability and low noisePlug-and-play compatibility for multiple scenarios
UV-enhanced Silicon PIN Photodiode (TO Package)
Optoelectronic conversion device with TO transistor package and metal hermetic sealingMetal hermetic packaging, stable over a wide temperature rangeHigh-sensitivity optimization in the ultraviolet bandLow noise and fast responseIndustrial-grade environmental toleranceFlexible adaptation of glass/quartz windows
UV Photodetector
SiC-EUV-AG Photodetector
Solid-State Integrated EUV Detection SolutionFundamental Advantages Empowered by Wide-Bandgap MaterialsPrecise Response Capability in the EUV BandFunctional Upgrade of AG (Enhanced Gain)Stable Adaptability to Extreme Environments
SiC-VUV-AG Photodetector
Professional-grade Detection Benchmark for the VUV BandMaterial and StabilityAnti-interference and Signal PurityFlexible Gain AdaptationEnvironmental CompatibilityPerformance and Services
SiC-AG Photodetector
Focus on industrial & research mid-UV accurate measurement needsMaterial-Enabled High StabilityPure Signal and Anti-InterferenceFlexible Gain for Full-Scenario AdaptationMulti-Scenario Compatible DesignLong-Term Reliability and Low Maintenance
GaN-AG Photodetector
Optoelectronic devices based on wide bandgap semiconductorsFull ultraviolet band coverageFlexible and adjustable gainHigh reliability and environmental adaptabilityComplete customization and supporting facilities
Si-30keV-AG X-Ray Detector
A dedicated radiation measurement device designed based on silicon (Si) material.Multi-ray compatibilityHigh detection performanceVacuum environment adaptationStable and durable
Si/InGaAs-Ps-S Photodetector
Constructed based on indium arsenide antimonide (InAsSb) materialUltra-high-speed response mechanismHigh-sensitivity detection capabilityWide spectral adaptability
Si-PDA-Adj-G Photodetector
Silicon-based amplifying photodetectorWide spectral coverage and strong silicon-based compatibilityEnlarged design with outstanding low-light detection capabilityAdjustable gain + bandwidth adaptation for wide scene compatibilityHigh compatibility + standardization for easy integration
Laser Viewers
Si-PDA-Fix-G Photodetector
An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.Wide range of materials and spectral coverageAmplifying type + fixed gain designBalanced performance in both sensitivity and speedHigh compatibility and easy integrationStrong scene adaptability
Si-DET-Bd-Hs PHOTODETECTOR
Silicon-based biased high-speed photoelectric conversion deviceBroad spectrum response adaptationHigh-speed response performanceLow-noise and stable outputMultiple coupling methodsHigh compatibility
Balanced Photodetector
Low-Noise Balanced Photodetectors
Precision optoelectronic instruments designed for Coherent Detection and Weak Signal ExtractionHigh CMRRUltra-Wide Adjustable GainFlexible BandwidthVersatile Coupling
InGaAs PIN Balance Detector
320–1700nm balanced detectorDual wideband chips (Si/InGaAs): Covers visible to NIR.5 gain levels (10³–10⁷ V/A): For weak/strong signals.High CMRI: Eliminates background & laser noise.High speed: DC–150MHz bandwidth.Ultra-low noise: Pure weak interference signal output.
Avalanche Photodiode
Si-APD-AG AV Photodetector
Silicon-based amplifying adjustable gain photodetection equipmentHigh-sensitivity weak light detectionWide gain adjustment rangeMulti-scenario adaptabilityHigh ease of use
InGaAs-APDI-AG AV Photodetector
High-sensitivity photoelectric detection equipment for near-infrared light detectionHigh-sensitivity weak light detectionWide gain adjustment rangeMultiple models to adapt to different needsStable and reliable performance
Si-APD-Fix-G AV Photodetector
Silicon material photoelectric detection equipmentHigh sensitivity and fixed gainGood compatibilityExcellent performance and high cost-effectiveness
InGaAs-APD-Fix-G AV Photodetector
Professional avalanche photodetectors for near-infrared light detectionHigh-sensitivity detectionFixed gain stabilitySpecific wavelength band responseIntegrated amplification function
