InGaAs PIN Balance Detector

320–1700nm balanced detector

Dual wideband chips (Si/InGaAs): Covers visible to NIR.
5 gain levels (10³–10⁷ V/A): For weak/strong signals.
High CMRI: Eliminates background & laser noise.
High speed: DC–150MHz bandwidth.
Ultra-low noise: Pure weak interference signal output.

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Data Sheet

Overview

Flexible gain, pure coherence

This component integrates a pair of highly matched Si PIN detector chips, an ultra-low noise amplifier circuit, and a low-noise power supply. It covers the 320~1080nm wavelength range with a maximum bandwidth of 150MHz. By utilizing the principle of "physical subtraction" of dual-channel signals to filter out common-mode interference, it serves as the core foundation for obtaining high signal-to-noise ratio interference signals.

Applications

Doppler lidar: Wind & vibration sensing
OCT: Biomedical & industrial NDT imaging
Fiber optic sensing: High-precision distributed demodulation
Low-light detection: Ultra-weak optical signal capture

Dimension:

Specifications

VenusLab InGaAs PIN Balance Detector Comparison

Parameter	VL-BDS-15 (Si Version)	VL-BDI-15 (InGaAs Version)	Core Difference Analysis
Detector Material	Si PIN	InGaAs PIN	Material determines applicable wavelength.
Spectral Range	320 ~ 1080 nm	800 ~ 1700 nm	BDS is for VIS; BDI is for NIR (incl. 1550nm).
Active Area Diameter	800 μm	300 μm	BDS has a larger area for higher alignment tolerance.
-3dB Bandwidth	DC - 150 MHz	DC - 150 MHz	Identical high-frequency performance.
Transimpedance Gain	10³ / 10⁴ / 10⁵ / 10⁶ / 10⁷ V/A	10³ / 10⁴ / 10⁵ / 10⁶ / 10⁷ V/A	Identical 5-gear adjustable gain.
Peak Responsivity	0.53 A/W	1.0 A/W	BDI has higher conversion efficiency in NIR.
Output Responsivity	0.53 × 10³ ~ 10⁷ V/W	1.0 × 10³ ~ 10⁷ V/W	Scales synchronously with gain gears.
Saturation Power	9 mW (@ 820nm)	4.5 mW (@ 1550nm)	BDS has slightly better anti-saturation capability.
NEP (at DC-150MHz)	123 pW/√Hz	67.3 pW/√Hz	BDI has a lower noise floor at high frequencies.