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InGaAs-AG Photodetector
Overview
Introduction:
This indium gallium arsenide detector has a photosensitive range covering 800~2600nm and is commonly used in near and mid-infrared measurements. As an amplifying detector, it features 8 adjustable gain levels to achieve quantitative photoelectric conversion. It also has a wide dynamic range, making it suitable for various infrared optoelectronic development scenarios, with extensive applications. Additionally, it boasts excellent performance and high cost-effectiveness, and offers comprehensive technical support and non-standard customization services.
Features:
- Indium gallium arsenide material, for near and mid-infrared measurement in the 800~2600nm range
- Amplification type, 8 adjustable gain levels, supporting quantitative photoelectric conversion
- Wide dynamic range, suitable for various infrared optoelectronic development scenarios
- Excellent performance, high cost-effectiveness, providing comprehensive technical support
- Supporting non-standard customization
Dimension:
Specifications
Adjustable Gain Parameters
Responsivity
Serivce & Support
Explore Series
Model
Spectral Range
Photosensitive Size
Noise Equivalent Power (NEP)
Response Time Constant
Action
InGaAs-0.8/2.2um-1X1mm-AG8
800~2200nm
1mm×1mm
1.0×10⁻¹³ W/Hz¹/²
35ns
InGaAs-0.8/2.2um-2X2mm-AG8
800~2200nm
2mm×2mm (Large Target)
2.5×10⁻¹⁴ W/Hz¹/²
200ns
InGaAs-0.8/2.6um-1X1mm-AG8
800~2600nm (Mid-IR Extended)
1mm×1mm
1.0×10⁻¹² W/Hz¹/²
25ns
InGaAs-0.8/2.6um-2X2mm-AG8
800~2600nm (Mid-IR Extended)
2mm×2mm (Large Target)
2.0×10⁻¹² W/Hz¹/²
233ns
