VenusLab Large-Area APD

Large-Area APD Low-Light Module

200μm large target area, strong low-light capture
Strong light protection, chip safety
70MHz bandwidth, low noise and high signal-to-noise ratio
1550nm compatible, 1100–1700nm response
TO8 hermetic seal, wide temperature stability

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Data Sheet

Overview

Wider field of view, more stable light sensing

This component adopts a large-size 200μm InGaAs APD chip, integrating an avalanche gain amplifier circuit and a strong light protection system. While providing a stable bandwidth of 70MHz, it possesses extremely high signal detection sensitivity and anti-interference capability, making it a core tool for weak infrared photoelectric conversion.

Applications

LiDAR: Accurate detection of echo waves from long-distance targets.
Spatial Communication: High-fidelity reception of free-space optical signals.
Laser Ranging: Detection of weak reflection pulses in complex environments.
Fiber Optic Sensing: Extraction of weak light signals in long-distance sensing systems.

Dimension:

Module Structure Block Diagram

Absolute Maximum Ratings

Technical Specifications for APD Module

Parameter	Unit	Symbol	Value
APD Bias Voltage	V	VR	VBR−3
Operating Temperature	°C	TC	-40 to +85
Storage Temperature	°C	TSTG	-55 to +100
Max. Input Optical Power	mW	Pin	100
Module Operating Voltage	V	VCC/VEE	±5
Module Power Consumption	mW	PW	250
Soldering Temp (Time)	°C	-	300 (10s)

Specifications

Optoelectronic performance (T=25℃, ±5V supply, AC resistance Ri=50Ω)

Characteristic Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Conditions
Spectral Response Range	λ	\multicolumn{3}{c	}{1100 ~ 1700}	nm
Photosensitive Diameter	D		200		μm
Reverse Breakdown Voltage	VBR	30		70	V
Operating Voltage	VR	\multicolumn{3}{c	}{VBR−3}	V	M=10
Responsivity	Rv	360			kV/W	M=10,1.55μm@τ=4.5ns
Dynamic Range	DY	25			dB	M=10,1.55μm@τ=4.5ns
-3dB Bandwidth	BW		70		MHz	M=10,1.55μm@τ=10ns
Rise/Fall Time	tr		5		ns	M=10,1.55μm@τ=10ns
Equivalent Noise (NEP)	NEP		150		fW/Hz	M=10,f=100kHz to f3dB,Δ=1Hz
Output Impedance	RO		50		Ω
Max. Output Swing	VO	0.7			V
Positive Supply Current	ICC			30	mA
Negative Supply Current	IEE		10		mA	50 Ω Load
Bias Voltage Temp. Coeff.	γ		0.12		V/°C	-45 ~ 85°C
Concentricity	ΔD			30	μm