https://source.venuslabtech.com/mall-prod/cb55f23b-ed81-49fc-ae5d-c0c754f0b5e6.png

Silicon PIN Photodiode In The Ultraviolet To Near-Infrared Band

Part Number: PDCD100-F01

Highest sensitivity in low-light response; welding temperature of 260℃/5s, with strong compatibility for mass production; maximum reverse voltage of 20V, eliminating the need for additional voltage-reducing components in circuit design and simplifying peripheral circuits.


Suitable for devices with high requirements on photosensitive area, such as pulse oximeters in the medical field (relying on high sensitivity to near-infrared 1000nm) and wide-spectrum light intensity collection in large environmentaPackage Typel light monitoring stations (relying on large photosensitive area and extreme storage stability).

Images are for display purposes only.

Specifications

Package TypePhotosensitive Area Size (mm)Operating Temperature (℃)Dark Current (Max, pA)Junction Capacitance (pF)Rise Time (μs)
DIP10.0×10.0-20 to +8025010002.2
Unit Price
Total
Ship Date
TBD
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Model
Dark Current (Max, pA)
Package Type
Junction Capacitance (pF)
Photosensitive Area Size (mm)
Rise Time (μs)
Operating Temperature (℃)
Action
Telegram LogoWhatsApp Logo