Low Dark Current Silicon PIN Photodiode (TO18 packaging)
Core components in the field of medium and high-precision optical signal detection
- Excellent optical performance
- Strong structural adaptability
- Good environmental stability

PDCT01-201

PDCT01-202

PDCT01-205

PDCT02-201

PDCT02-202
Low Dark Current Silicon PIN Photodiode (COB packaging)
Core devices in the fields of low-light detection and precision measurement
- Wide-spectrum precise response
- Ultra-low noise detection capability
- High integration and mass production adaptability
- Industrial-grade environmental reliability

PDCC01-001

PDCC07-003

PDCC07-101

PDCC14-001

PDCC34-001

PDCC100-001
Low Dark Current Silicon PIN Photodiode (DIP package)
High-precision photodetection device based on silicon-based PIN structure
- Strong encapsulation adaptability
- Extremely low dark current
- Excellent environmental tolerance
Low Dark Current Silicon PIN Photodiode (TO packaging)
Silicon PIN structure photoelectric conversion device
- Flexible packaging adaptation
- Extremely low dark current
- Industrial-grade tolerance
- Fast response speed

PDCT01-201

PDCT01-202

PDCT07-001

PDCT14-001

PDCT15-001

PDCT34-101
Near-infrared enhanced silicon PIN photodiode (COB package)
Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared band
- Enhanced near-infrared response
• Low dark current and high precision
• Resistance to basic environments
• Friendly to mass production costs
Near-infrared enhanced silicon PIN photodiode (DIP package)
A passive photoelectric conversion functional device with a dual in-line package (DIP) through-hole package.
- Accurately capture weak signals
- Low dark current + high linearity
- Strong environmental adaptability + low-cost maintenance
Near-infrared enhanced silicon PIN photodiode (TO package)
Silicon-based PIN junction near-infrared optimized photoelectric conversion device.
- Highly efficient response in the near-infrared band
- High detection accuracy
- Fast response speed
- Wide scene adaptability
Silicon PIN photodiode in the ultraviolet to near-infrared band
A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.
- Accurate broadband response
- Low dark current with PIN structure
- High photoelectric linearity
- Stable environmental adaptability

PDCT01-F01

PDCT06-F01

PDCT25-F01

PDCD06-F01

PDCD25-F01

PDCD100-F01
Ultraviolet-enhanced Silicon PIN Photodiode (COB Package)
Optoelectronic conversion device with enhanced ultraviolet band response and COB package integration.
- High sensitivity in the ultraviolet band
- Strong integration adaptability
- Excellent environmental stability

PDCC07-601

PDCC14-601

PDCC34-601

PDCC100-701
UV-enhanced Silicon PIN Photodiode (DIP Package)
Optoelectronic conversion devices with DIP dual in-line package
- High-sensitivity detection in the ultraviolet band
- Engineering adaptability of DIP packaging
- Wide temperature range stability and low noise
- Plug-and-play compatibility for multiple scenarios

PDCD07-601

PDCD07-801

PDCD07-802

PDCD10-801

PDCD34-701

PDCD34-703

PDCD100-301

PDCD100-302
UV-enhanced Silicon PIN Photodiode (TO Package)
Optoelectronic conversion device with TO transistor package and metal hermetic sealing
- Metal hermetic packaging, stable over a wide temperature range
- High-sensitivity optimization in the ultraviolet band
- Low noise and fast response
- Industrial-grade environmental tolerance
- Flexible adaptation of glass/quartz windows

PDCT07-601

PDCT07-602

PDCT14-601

PDCT14-602

PDCT16-601

PDCT16-602

PDCT34-701















