InGaAs-APDI-AG AV Photodetector

High-sensitivity photoelectric detection equipment for near-infrared light detection

High-sensitivity weak light detection
Wide gain adjustment range
Multiple models to adapt to different needs
Stable and reliable performance

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Data Sheet

Overview

Detailed introduction and product dimension diagram：

This product is an indium gallium arsenide APD detector based on the avalanche effect, with a photosensitive range of 800nm to 1700nm. It is of the amplifying type and has 8 adjustable gain levels, capable of quantitative photoelectric conversion, featuring a wide dynamic range, excellent performance, and high cost-effectiveness. It provides comprehensive technical support and non-standard customization services, and is suitable for various photoelectric development scenarios such as weak light and near-infrared light detection.

Specifcations

Core identical parameters：

Parameter Name	Parameter Details
Spectral Response Range	800 - 1700nm
Detector Material	Indium Gallium Arsenide (InGaAs)
Detector Type	Amplified, Adjustable Gain Avalanche Photodetector
Gain Adjustment Method	1. Rotary gear adjustment: 0 - 70dB, one step per 10dB, 8 steps in total 2. Single - turn potentiometer to adjust the APD's own gain; The bandwidth is inversely proportional to the gain
Signal Amplitude	Hi - Z load: 0 - 10V; 50Ω load: 0 - 5V
Detector Net Weight	0.1kg
Operating Temperature	10 - 40℃
Storage Temperature	-20 - 70℃
Power Supply Interface	Power Switch: Slide switch with LED indicator Signal Interface: BNC female connector Gain Adjustment: Single - turn potentiometer, 8 - position knob Support Rod Interface: M4 X 2 Optical Interface: SM1 X 1, SM0.5 X 1
Appearance Size	2.78" X 2.21" X 1.20" (70.6 mm X 56.2 mm X 30.5 mm)

Adjustable Gain Parameters

Eight-speed quantitatively adjustable gain parameters:

	0dB	10dB	20dB	30dB
Gain (Hi-Z)	1.51×10³ V/A	4.75×10³ V/A	1.5×10⁴ V/A	4.75×10⁴ V/A
Gain (50Ω)	0.75×10³ V/A	2.38×10³ V/A	0.75×10⁴ V/A	2.38×10⁴ V/A
Bandwidth (BW)	12MHz	1.6MHz	1MHz	260kHz
Noise (RMS)	258μV	192μV	207μV	211μV
	40dB	50dB	60dB	70dB
Gain (Hi-Z)	1.51×10⁵ V/A	4.75×10⁵ V/A	1.5×10⁵ V/A	4.75×10⁶ V/A
Gain (50Ω)	0.75×10⁵ V/A	2.38×10⁵ V/A	0.75×10⁶ V/A	2.38×10⁶ V/A
Bandwidth (BW)	90kHz	28kHz	9kHz	3kHz
Noise (RMS)	214μV	234μV	277μV	388μV
Signal Offset	±8mV(Typ.) ，±12mV(Max)