Near-infrared enhanced silicon PIN photodiode (TO package)

Introduction:

This device features a spectral response range of 350~1100nm, optimized near-infrared wavelength response, extremely low junction capacitance, high response speed, and low dark current characteristics, making it suitable for optical power detection and optical analysis equipment.

By virtue of the design of silicon PIN junctions, material doping, and anti-reflection coatings, the absorption and conversion efficiency of near-infrared light is significantly improved, enabling efficient light harvesting.

Features:

• The photoensitive surface is equipped with an anti-reflection coating.
• The dark current temperature drift coefficient is small.
• The linearity between photocurrent and near-infrared light intensity is excellent.
• Supports shielding or gating function expansion.

Dimension:

Common Parameter Specification Table

Spectral response

Dark current vs. reverse voltage

Junction capacitance vs. reverse voltage

Photosensitivity temperature characteristics