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UV-enhanced Silicon PIN Photodiode (DIP Package)
Optoelectronic conversion devices with DIP dual in-line package
- High-sensitivity detection in the ultraviolet band
- Engineering adaptability of DIP packaging
- Wide temperature range stability and low noise
- Plug-and-play compatibility for multiple scenarios
Overview
Introduction:
This ultraviolet-enhanced silicon PIN photodiode has a spectral response range of 250~1060nm, featuring low dark current, low junction capacitance, and optimized ultraviolet response. It adopts a DIP package and is suitable for optical power detection and optical analysis equipment.
It efficiently captures ultraviolet light signals, while being compatible with the inherent near-infrared band (700~1100nm) response capability of silicon PIN diodes, and is suitable for through-hole circuit installation scenarios.
Features:
- Composite coating with UV aging resistance
- Deep ultraviolet passivation to suppress leakage current
- DIP housing with vibration resistance and reliability
- Minimal cross-section response fluctuation
Dimension:
Specifcations
Applications
Serivce & Support
浏览全部型号
型号
Dark Current (Max, pA)
Window Material
Photosensitive Area Size (mm)
Junction Capacitance (Max, pF)
Equivalent Noise Power (W/Hz¹/²)
Spectral Response Range (nm)
操作
PDCD07-601
30
Resin
2.6×2.6
80
5.3×10⁻¹⁵
320~1060
PDCD07-801
50
Resin
2.6×2.6
90
5.7×10⁻¹⁵
320~1060
PDCD07-802
50
Quartz
2.6×2.6
90
6.7×10⁻¹⁵
250~1060
PDCD10-801
90
Resin
3.2×3.2
120
9.2×10⁻¹⁵
320~1060
PDCD34-701
300
Resin
5.8×5.8
400
9.9×10⁻¹⁵
320~1060
PDCD34-703
300
Quartz
5.8×5.8
400
9.9×10⁻¹⁵
250~1060
PDCD100-301
800
Resin
10×10
1000
1.2×10⁻¹⁴
320~1060
PDCD100-302
800
Quartz
10×10
1000
1.3×10⁻¹⁴
250~1060
