InGaAs Photodetector
High-Speed Photodetector 5G
5GHz Broadband Low-Noise InGaAs Detector5GHz bandwidth, 60ps rising edge.800-1700nm NIR response.Built-in RF matching & bias circuits.Tolerates 100mW pulsed optical power.Standard FC/PC & SMA interfaces.
VenusLab Large-Area APD
Large-Area APD Low-Light Module200μm large target area, strong low-light captureStrong light protection, chip safety70MHz bandwidth, low noise and high signal-to-noise ratio1550nm compatible, 1100–1700nm responseTO8 hermetic seal, wide temperature stability
InGaAs-PDA-Adj-G PHOTODETECTOR
Optoelectronic devices designed for the near-infrared band (800~1700nm)Material and spectrum adaptationAmplification type and adjustable gainWide dynamic range and high bandwidthHigh compatibility and ease of useStable and reliable
InGaAs-AG PHOTODETECTOR
Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection materialWide coverage of spectral extensionAmplification type + adjustable gainLow noise and high precisionHigh compatibility and easy integrationStable adaptation to multiple environments
InGaAs-PDA-Fix-G PHOTODETECTOR
Ear-infrared dedicated detection equipmentMaterial and spectrum adaptationAmplification type + fixed gain designPerformance balances sensitivity and speedHigh compatibility and stability
InGaAs-DET-Bd-Conv PHOTODETECTOR
Low-cost, high-stability general-purpose photoelectric conversion devicesIndium gallium arsenide wide spectrumLow bias, low noise, fast responseCompatible with Thorlabs conventionallyStable, reliable and customizable
光电二极管
Low Dark Current Silicon PIN Photodiode（350-1060nm）
Core components in the field of medium and high-precision optical signal detectionExcellent optical performanceStrong structural adaptabilityGood environmental stability
Low Dark Current Silicon PIN Photodiode (COB packaging)
微光检测、精密测量领域的核心器件宽光谱精准响应超低噪声检测能力高集成量产适配工业级环境可靠性
Low Dark Current Silicon PIN Photodiode (DIP package)
基于硅基 PIN 结构的高精度光探测器件封装适配性强暗电流极低环境耐受性优
Low Dark Current Silicon PIN Photodiode (TO packaging)
Silicon PIN structure photoelectric conversion deviceFlexible packaging adaptationExtremely low dark currentIndustrial-grade toleranceFast response speed
Near-infrared enhanced silicon PIN photodiode (COB package)
Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared bandEnhanced near-infrared response• Low dark current and high precision• Resistance to basic environments• Friendly to mass production costs
Near-infrared enhanced silicon PIN photodiode (DIP package)
采用双列直插（DIP）通孔封装的被动式光电转换功能器件。精准捕捉弱信号低暗电流 + 高线性度强环境适配 + 低成本维护
Near-infrared enhanced silicon PIN photodiode (TO package)
Silicon-based PIN junction near-infrared optimized photoelectric conversion device.Highly efficient response in the near-infrared bandHigh detection accuracyFast response speedWide scene adaptability
Silicon PIN photodiode in the ultraviolet to near-infrared band
A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.Accurate broadband responseLow dark current with PIN structureHigh photoelectric linearityStable environmental adaptability
Ultraviolet-enhanced Silicon PIN Photodiode (COB Package)
Optoelectronic conversion device with enhanced ultraviolet band response and COB package integration.High sensitivity in the ultraviolet bandStrong integration adaptabilityExcellent environmental stability
UV-enhanced Silicon PIN Photodiode (DIP Package)
Optoelectronic conversion devices with DIP dual in-line packageHigh-sensitivity detection in the ultraviolet bandEngineering adaptability of DIP packagingWide temperature range stability and low noisePlug-and-play compatibility for multiple scenarios
UV-enhanced Silicon PIN Photodiode (TO Package)
Optoelectronic conversion device with TO transistor package and metal hermetic sealingMetal hermetic packaging, stable over a wide temperature rangeHigh-sensitivity optimization in the ultraviolet bandLow noise and fast responseIndustrial-grade environmental toleranceFlexible adaptation of glass/quartz windows
UV Photodetector
SiC-EUV-AG 光电探测器
SiC-VUV-AG Photodetector
SiC-AG Photodetector
聚焦工业级与科研级中紫外波段精准测量需求材质赋能高稳定性信号纯净抗干扰增益灵活全场景适配多场景兼容设计长效可靠低维护
GaN-AG Photodetector
Optoelectronic devices based on wide bandgap semiconductors.Full ultraviolet band coverageFlexible and adjustable gainHigh reliability and environmental adaptabilityComplete customization and supporting facilities
Si-30keV-AG X-Ray Detector
A dedicated radiation measurement device designed based on silicon (Si) material.Multi-ray compatibilityHigh detection performanceVacuum environment adaptationStable and durable
Si/InGaAs-Ps-S Photodetector
Constructed based on indium arsenide antimonide (InAsSb) materialUltra-high-speed response mechanismHigh-sensitivity detection capabilityWide spectral adaptability
Si-PDA-Adj-G PHOTODETECTOR
Silicon-based amplifying photodetectorWide spectral coverage and strong silicon-based compatibilityEnlarged design with outstanding low-light detection capabilityAdjustable gain + bandwidth adaptation for wide scene compatibilityHigh compatibility + standardization for easy integration
Si-PDA-Fix-G PHOTODETECTOR
An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.Wide range of materials and spectral coverageAmplifying type + fixed gain designBalanced performance in both sensitivity and speedHigh compatibility and easy integrationStrong scene adaptability
Si-DET-Bd-Hs PHOTODETECTOR
Silicon-based biased high-speed photoelectric conversion deviceBroad spectrum response adaptationHigh-speed response performanceLow-noise and stable outputMultiple coupling methodsHigh compatibility
Balanced Photodetector
Low-Noise Balanced Photodetectors
Precision optoelectronic instruments designed for Coherent Detection and Weak Signal ExtractionHigh CMRRUltra-Wide Adjustable GainFlexible BandwidthVersatile Coupling
Si Adjustable Gain Balanced Detector
Si-based balanced detector for coherent weak-light sensing.5-Gear Gain: 10³~10⁷ V/A flexible adjustment.Strong Denoising: High Common-Mode Rejection Ratio (CMRR).High-Speed Bandwidth: DC-150MHz dynamic response.Ultra-Low Noise: Pure extraction of weak interference signals.Broadband Response: 320~1080nm Si-based sensing.
Avalanche Photodiode
Si-APD-AG AV PHOTODETECTOR
Silicon-based amplifying adjustable gain photodetection equipmentHigh-sensitivity weak light detectionWide gain adjustment rangeMulti-scenario adaptabilityHigh ease of use
InGaAs-APDI-AG AV PHOTODETECTOR
High-sensitivity photoelectric detection equipment for near-infrared light detectionHigh-sensitivity weak light detectionWide gain adjustment rangeMultiple models to adapt to different needsStable and reliable performance
Si-APD-Fix-G AV PHOTODETECTOR
Silicon material photoelectric detection equipmentHigh sensitivity and fixed gainGood compatibilityExcellent performance and high cost-effectiveness
InGaAs-APD-Fix-G AV PHOTODETECTOR
Professional avalanche photodetectors for near-infrared light detectionHigh-sensitivity detectionFixed gain stabilitySpecific wavelength band responseIntegrated amplification function
