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Optoelectronic devices based on wide bandgap semiconductors.
This GaN-based photodetector has a photosensitive range covering 210nm to 440nm, making it suitable for ultraviolet light measurement, and features high responsivity at a wavelength of 355nm. It adopts a vacuum flange structure, compatible with a high vacuum environment of ≤10⁻⁴Pa. As an amplifying detector, it supports 8 adjustable gain levels, enabling quantitative photoelectric conversion in scenarios with different light intensities. Additionally, it offers advantages such as high stability, long service life, and high cost performance, and also provides comprehensive technical support and non-standard customization services.
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