探测器

聚焦工业级与科研级中紫外波段精准测量需求

材质赋能高稳定性

信号纯净抗干扰

增益灵活全场景适配

多场景兼容设计

长效可靠低维护

Optoelectronic devices based on wide bandgap semiconductors.

• Full ultraviolet band coverage
• Flexible and adjustable gain
• High reliability and environmental adaptability
• Complete customization and supporting facilities

A dedicated radiation measurement device designed based on silicon (Si) material.

• Multi-ray compatibility
• High detection performance
• Vacuum environment adaptation
• Stable and durable

Constructed based on indium arsenide antimonide (InAsSb) material

• Ultra-high-speed response mechanism
• High-sensitivity detection capability
• Wide spectral adaptability

Silicon-based amplifying photodetector

• Wide spectral coverage and strong silicon-based compatibility
• Enlarged design with outstanding low-light detection capability
• Adjustable gain + bandwidth adaptation for wide scene compatibility
• High compatibility + standardization for easy integration

Optoelectronic devices designed for the near-infrared band (800~1700nm)

• Material and spectrum adaptation
• Amplification type and adjustable gain
• Wide dynamic range and high bandwidth
• High compatibility and ease of use
• Stable and reliable

Optoelectronic devices with indium gallium arsenide (InGaAs) as the core detection material

• Wide coverage of spectral extension
• Amplification type + adjustable gain
• Low noise and high precision
• High compatibility and easy integration
• Stable adaptation to multiple environments

An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.

• Wide range of materials and spectral coverage
• Amplifying type + fixed gain design
• Balanced performance in both sensitivity and speed
• High compatibility and easy integration
• Strong scene adaptability

Ear-infrared dedicated detection equipment

• Material and spectrum adaptation
• Amplification type + fixed gain design
• Performance balances sensitivity and speed
• High compatibility and stability

Low-cost, high-stability general-purpose photoelectric conversion devices

• Indium gallium arsenide wide spectrum
• Low bias, low noise, fast response
• Compatible with Thorlabs conventionally
• Stable, reliable and customizable

Silicon-based biased high-speed photoelectric conversion device

• Broad spectrum response adaptation
• High-speed response performance
• Low-noise and stable output
• Multiple coupling methods
• High compatibility

Silicon-based amplifying adjustable gain photodetection equipment

• High-sensitivity weak light detection
• Wide gain adjustment range
• Multi-scenario adaptability
• High ease of use

High-sensitivity photoelectric detection equipment for near-infrared light detection

• High-sensitivity weak light detection
• Wide gain adjustment range
• Multiple models to adapt to different needs
• Stable and reliable performance

Silicon material photoelectric detection equipment

• High sensitivity and fixed gain
• Good compatibility
• Excellent performance and high cost-effectiveness

Professional avalanche photodetectors for near-infrared light detection

• High-sensitivity detection
• Fixed gain stability
• Specific wavelength band response
• Integrated amplification function

Core components in the field of medium and high-precision optical signal detection

• Excellent optical performance
• Strong structural adaptability
• Good environmental stability

微光检测、精密测量领域的核心器件

• 宽光谱精准响应
• 超低噪声检测能力
• 高集成量产适配
• 工业级环境可靠性

基于硅基 PIN 结构的高精度光探测器件

• 封装适配性强
• 暗电流极低
• 环境耐受性优

Silicon PIN structure photoelectric conversion device

• Flexible packaging adaptation
• Extremely low dark current
• Industrial-grade tolerance
• Fast response speed

Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared band

• Enhanced near-infrared response
  • Low dark current and high precision
  • Resistance to basic environments
  • Friendly to mass production costs

采用双列直插（DIP）通孔封装的被动式光电转换功能器件。

• 精准捕捉弱信号
• 低暗电流 + 高线性度
• 强环境适配 + 低成本维护

Silicon-based PIN junction near-infrared optimized photoelectric conversion device.

• Highly efficient response in the near-infrared band
• High detection accuracy
• Fast response speed
• Wide scene adaptability

A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.

• Accurate broadband response
• Low dark current with PIN structure
• High photoelectric linearity
• Stable environmental adaptability

Optoelectronic conversion device with enhanced ultraviolet band response and COB package integration.

• High sensitivity in the ultraviolet band
• Strong integration adaptability
• Excellent environmental stability
  

Optoelectronic conversion devices with DIP dual in-line package

• High-sensitivity detection in the ultraviolet band
• Engineering adaptability of DIP packaging
• Wide temperature range stability and low noise
• Plug-and-play compatibility for multiple scenarios

Optoelectronic conversion device with TO transistor package and metal hermetic sealing

• Metal hermetic packaging, stable over a wide temperature range
• High-sensitivity optimization in the ultraviolet band
• Low noise and fast response
• Industrial-grade environmental tolerance
• Flexible adaptation of glass/quartz windows