| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Near-infrared enhanced silicon PIN photodiode (COB package)
产品编号: PDCC34-501
It has better low-light detection accuracy, suitable for detecting extremely weak light signals at the μW level; it has a faster high-frequency response speed, capable of capturing pulsed near-infrared signals below 1MHz (such as infrared remote control coding, short-distance infrared communication feedback).
It has strong versatility in the medium and short near-infrared range, and can be adapted to multiple near-infrared detection scenarios without replacing components.
图片仅做展示
已配置规格
| Photosensitive Area Size (mm) | Window Material | Dark Current (V_R=10mV, Typ./Max., pA) | Photosensitivity (Typ., A/W) | Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF) | Rise Time (R_L=1kΩ,V_R=0V, Typ., μs) |
|---|---|---|---|---|---|
| 5.8×5.8 | Resin | 60/360 | 0.43@633nm, 0.62@920nm | 400/500 | 0.9 |
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型号
Photosensitivity (Typ., A/W)
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)
Photosensitive Area Size (mm)
Window Material
Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
Dark Current (V_R=10mV, Typ./Max., pA)
操作
