| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Near-infrared enhanced silicon PIN photodiode (COB package)
产品编号: PDCC100-501
It has outstanding large-area detection capability and is suitable for scenarios requiring large-scale optical signal collection, such as "greenhouse environmental light intensity monitoring and large optical analysis equipment"; the long near-infrared range has strong pertinence and is a dedicated choice for industrial 1064nm laser power monitoring and long-distance infrared sensing.
It has higher environmental durability and can operate stably in industrial environments with high humidity (10%~90% RH) or slight dust without additional protection.
图片仅做展示
已配置规格
| Photosensitive Area Size (mm) | Window Material | Dark Current (V_R=10mV, Typ./Max., pA) | Photosensitivity (Typ., A/W) | Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF) | Rise Time (R_L=1kΩ,V_R=0V, Typ., μs) |
|---|---|---|---|---|---|
| 10×10 | Resin | 150/900 | 0.24@1064nm | 1000/1200 | 2.2 |
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型号
Photosensitivity (Typ., A/W)
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)
Photosensitive Area Size (mm)
Window Material
Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
Dark Current (V_R=10mV, Typ./Max., pA)
操作
