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Near-infrared enhanced silicon PIN photodiode (COB package)

产品编号: PDCC100-501

It has outstanding large-area detection capability and is suitable for scenarios requiring large-scale optical signal collection, such as "greenhouse environmental light intensity monitoring and large optical analysis equipment"; the long near-infrared range has strong pertinence and is a dedicated choice for industrial 1064nm laser power monitoring and long-distance infrared sensing.


It has higher environmental durability and can operate stably in industrial environments with high humidity (10%~90% RH) or slight dust without additional protection.

注意事项
  • 产品图片仅供参考,并不代表所有产品。

已配置规格

Photosensitive Area Size (mm)10×10Window Material Resin
Dark Current (V_R=10mV, Typ./Max., pA)150/900Photosensitivity (Typ., A/W)0.24@1064nm
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)1000/1200Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)2.2
单价
总计
发货日期
待定
数量
数量 价格(USD)发货日期
1-10待定
10-待定
注意:发货日期以上是因库存不足而调整的。

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Near-infrared enhanced silicon PIN photodiode (COB package)

PDCC34-501
Photosensitive surface size 5.8×5.8mm.
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