| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
订阅Venus Lab Inner Lens，抢先获得行业最新
科研突破、新品发布和特别活动的独家内幕。
当订阅我们的品牌资讯时，您的个人信息将被妥善保护，
并严格遵守我们的隐私政策。
Near-infrared enhanced silicon PIN photodiode (DIP package)
产品编号: PDCD34-501
High-speed response: With a rise time of 50μs and a low junction capacitance of 300pF, it captures high-frequency near-infrared signals faster, reduces signal delay, and is suitable for high-speed optical signal detection scenarios.
Low noise: A maximum dark current of 0.9pA and a low equivalent noise power can further reduce detection noise, ensuring the accuracy of weak near-infrared light signal conversion.
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Photosensitive Area Size | 5.8×5.8mm | Rise Time (tr) | 50μs |
| Junction Capacitance (Cj, VR=10mV) | 300pF | Maximum Dark Current (ID, VR=0V) | 0.9pA |
| Peak Responsivity Wavelength & Photoresponse | 920nm (0.62A/W) | Noise Equivalent Power (NEP) | 1.5×10⁻¹⁴ W/Hz¹/² |
