| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Near-infrared enhanced silicon PIN photodiode (DIP package)
产品编号: PDCD34-501
High-speed response: With a rise time of 50μs and a low junction capacitance of 300pF, it captures high-frequency near-infrared signals faster, reduces signal delay, and is suitable for high-speed optical signal detection scenarios.
Low noise: A maximum dark current of 0.9pA and a low equivalent noise power can further reduce detection noise, ensuring the accuracy of weak near-infrared light signal conversion.
图片仅做展示
已配置规格
| Photosensitive Area Size | Rise Time (tr) | Junction Capacitance (Cj, VR=10mV) | Maximum Dark Current (ID, VR=0V) | Peak Responsivity Wavelength & Photoresponse | Noise Equivalent Power (NEP) |
|---|---|---|---|---|---|
| 5.8×5.8mm | 50μs | 300pF | 0.9pA | 920nm (0.62A/W) | 1.5×10⁻¹⁴ W/Hz¹/² |
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型号
Photosensitive Area Size
Maximum Dark Current (ID, VR=0V)
Junction Capacitance (Cj, VR=10mV)
Noise Equivalent Power (NEP)
Rise Time (tr)
Peak Responsivity Wavelength & Photoresponse
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