| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Near-infrared enhanced silicon PIN photodiode (DIP package)
产品编号: PDCD100-501
High photosensitive area and adaptation to specific wavelengths: A larger photosensitive surface can receive more near-infrared light, making it suitable for scenarios requiring high light flux or detection of specific long-wavelength near-infrared rays.
High potential for photocurrent output: A larger photosensitive area combined with a light response adapted to 1064nm can output a larger photocurrent under the same light intensity, reducing the design difficulty of subsequent signal amplification circuits.
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Photosensitive Area Size | 10×10mm | Rise Time (tr) | 150μs |
| Junction Capacitance (Cj, VR=10mV) | 900pF | Maximum Dark Current (ID, VR=0V) | 1.8pA |
| Peak Responsivity Wavelength & Photoresponse | 1064nm (0.26A/W) | Noise Equivalent Power (NEP) | 2.5×10⁻¹⁴ W/Hz¹/² |
