| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Near-infrared enhanced silicon PIN photodiode (DIP package)
产品编号: PDCD100-501
High photosensitive area and adaptation to specific wavelengths: A larger photosensitive surface can receive more near-infrared light, making it suitable for scenarios requiring high light flux or detection of specific long-wavelength near-infrared rays.
High potential for photocurrent output: A larger photosensitive area combined with a light response adapted to 1064nm can output a larger photocurrent under the same light intensity, reducing the design difficulty of subsequent signal amplification circuits.
图片仅做展示
已配置规格
| Photosensitive Area Size | Rise Time (tr) | Junction Capacitance (Cj, VR=10mV) | Maximum Dark Current (ID, VR=0V) | Peak Responsivity Wavelength & Photoresponse | Noise Equivalent Power (NEP) |
|---|---|---|---|---|---|
| 10×10mm | 150μs | 900pF | 1.8pA | 1064nm (0.26A/W) | 2.5×10⁻¹⁴ W/Hz¹/² |
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型号
Photosensitive Area Size
Maximum Dark Current (ID, VR=0V)
Junction Capacitance (Cj, VR=10mV)
Noise Equivalent Power (NEP)
Rise Time (tr)
Peak Responsivity Wavelength & Photoresponse
操作
