| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Silicon PIN photodiode in the ultraviolet to near-infrared band
产品编号: PDCT01-F01
The photosensitive surface size is 1.0×1.0mm, suitable for space-constrained scenarios; it has strong stability in converting high-frequency optical signals and can withstand a wide temperature range environment.
It is suitable for high-frequency optical power detection, such as monitoring of 1000nm near-infrared pulsed optical signals and cross-band optical sensing in miniaturized optical devices.
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已配置规格
| Package Type | Photosensitive Area Size (mm) | Operating Temperature (℃) | Dark Current (Max, pA) | Junction Capacitance (pF) | Rise Time (μs) |
|---|---|---|---|---|---|
| TO18 | 1.0×1.0 | -40 to +100 | 50 | 15 | 0.03 |
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型号
Dark Current (Max, pA)
Package Type
Junction Capacitance (pF)
Photosensitive Area Size (mm)
Rise Time (μs)
Operating Temperature (℃)
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