| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
订阅Venus Lab Inner Lens，抢先获得行业最新
科研突破、新品发布和特别活动的独家内幕。
当订阅我们的品牌资讯时，您的个人信息将被妥善保护，
并严格遵守我们的隐私政策。
Silicon PIN photodiode in the ultraviolet to near-infrared band
产品编号: PDCT01-F01
The photosensitive surface size is 1.0×1.0mm, suitable for space-constrained scenarios; it has strong stability in converting high-frequency optical signals and can withstand a wide temperature range environment.
It is suitable for high-frequency optical power detection, such as monitoring of 1000nm near-infrared pulsed optical signals and cross-band optical sensing in miniaturized optical devices.
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Package Type | TO18 | Photosensitive Area Size (mm) | 1.0×1.0 |
| Operating Temperature (℃) | -40 to +100 | Dark Current (Max, pA) | 50 |
| Junction Capacitance (pF) | 15 | Rise Time (μs) | 0.03 |
浏览全部型号
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT06-F01
Pectral response 190~1100nm, peak wavelength 1000nm, excellent near-infrared responsivity.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT25-F01
190~1100nm wide spectral response, high conversion efficiency at near-IR.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCD06-F01
No UV-NIR response gap, strong full-wavelength adaptability.
