| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Silicon PIN photodiode in the ultraviolet to near-infrared band
产品编号: PDCD100-F01
Highest sensitivity in low-light response; welding temperature of 260℃/5s, with strong compatibility for mass production; maximum reverse voltage of 20V, eliminating the need for additional voltage-reducing components in circuit design and simplifying peripheral circuits.
Suitable for devices with high requirements on photosensitive area, such as pulse oximeters in the medical field (relying on high sensitivity to near-infrared 1000nm) and wide-spectrum light intensity collection in large environmentaPackage Typel light monitoring stations (relying on large photosensitive area and extreme storage stability).
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已配置规格
| Package Type | Photosensitive Area Size (mm) | Operating Temperature (℃) | Dark Current (Max, pA) | Junction Capacitance (pF) | Rise Time (μs) |
|---|---|---|---|---|---|
| DIP | 10.0×10.0 | -20 to +80 | 250 | 1000 | 2.2 |
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型号
Dark Current (Max, pA)
Package Type
Junction Capacitance (pF)
Photosensitive Area Size (mm)
Rise Time (μs)
Operating Temperature (℃)
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