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Low Dark Current Silicon PIN Photodiode (DIP package)
High-precision photodetection device based on silicon-based PIN structure
- Strong encapsulation adaptability
- Extremely low dark current
- Excellent environmental tolerance
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Overview
Specifications
Applications
Introduction:
Low dark current Si photodiodes (DIP package) have a spectral response range of 350~1060nm, along with extremely low dark current and low junction capacitance characteristics. They can be widely used in photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.
Adopting a dual in-line package structure, they are compatible with standard slots of industrial equipment PCB boards and support direct insertion welding. For later maintenance, they can be individually plugged and replaced without desoldering the entire board, which significantly reduces maintenance costs and time, and is suitable for large-scale industrial mass production and equipment iteration.
Features:
- Extremely low dark current, advantage in weak light detection
- DIP package: industrial adaptation and convenient maintenance
- 350~1060nm wide spectrum, covering multiple scenarios
- Industrial-grade reliability
Dimension:
Explore Series
Low Dark Current Silicon PIN Photodiode (DIP Package)
PDCD07-001
2.6×2.6mm square photosensitive surface.
Low Dark Current Silicon PIN Photodiode (DIP package)
PDCD10-001
3.2×3.2mm square photosensitive surface.
Low Dark Current Silicon PIN Photodiode (DIP package)
PDCD10-201
3.2×3.2mm square photosensitive surface, optimized for near-infrared.
Low Dark Current Silicon PIN Photodiode (DIP package)
PDCD34-101
5.8×5.8mm square photosensitive surface.
