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Low Dark Current Silicon PIN Photodiode (DIP package)

Part Number: PDCD10-201

Optimized for a peak wavelength of 800nm, the near-infrared band (760~1060nm) is suitable for detection scenarios dominated by near-infrared; the peak optimization compensates for the weak near-infrared response of ordinary models.


It can directly replace the latter to adapt to near-infrared equipment without adjusting the circuit or optical structure.

Caution
  • Product image is for representative purposes only and not reflective of every product available on this page.

Configured Specifications

Photosensitive Area Size (with Shape)3.2×3.2mm (Square)Dark Current (Typ./Max., pA)3.5/20
Junction Capacitance (Typ., pF)115 Rise Time (Typ., μs)0.25
Shunt Resistance (Min., GΩ)3Equivalent Noise Power (Typ., W/Hz¹/²)4.6×10⁻¹⁵
Unit Price
Total
Ship Date
TBD
Qty.
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

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