A high NA (0.55) improves the resolution to 0.50μm, enabling observation of nanostructures; a small depth of focus is suitable for high-precision measurement of flat surfaces.

Applications include:
Nanoscale scratch/short circuit detection of semiconductor chips (with a resolution of 0.50μm, suitable for nanoscale defects);
Analysis of atomic arrangement and defects in metal grain boundaries (DI technology enhances grain boundary contrast);
Precise 3D topography measurement of MEMS devices (such as bending deformation of microbeams).