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Near-infrared enhanced silicon PIN photodiode (TO package)
Silicon-based PIN junction near-infrared optimized photoelectric conversion device.
- Highly efficient response in the near-infrared band
- High detection accuracy
- Fast response speed
- Wide scene adaptability
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Overview
Specifications
Applications
Introduction:
This device features a spectral response range of 350~1100nm, optimized near-infrared wavelength response, extremely low junction capacitance, high response speed, and low dark current characteristics, making it suitable for optical power detection and optical analysis equipment.
By virtue of the design of silicon PIN junctions, material doping, and anti-reflection coatings, the absorption and conversion efficiency of near-infrared light is significantly improved, enabling efficient light harvesting.
Features:
- The photoensitive surface is equipped with an anti-reflection coating.
- The dark current temperature drift coefficient is small.
- The linearity between photocurrent and near-infrared light intensity is excellent.
- Supports shielding or gating function expansion.
Dimension:
Explore Series
Near-Infrared Enhanced Silicon PIN Photodiode (TO Package)
PDCT01-302
Optical glass flat window, photosensitive surface size 1.1×1.1mm.
Near-Infrared Enhanced Silicon PIN Photodiode (TO Package)
PDCT01-303
Large ball lens window, photosensitive surface size 1.1×1.1mm.
Near-Infrared Enhanced Silicon PIN Photodiode (TO Package)
PDCT01-304
Optical glass flat window, photosensitive surface size 1.1×1.1mm.
