SiC-VUV-AG Photodetector
SiC-180/200nm-1 X 1mm-AG8
1×1mm 方形光敏面，匹配 φ1mm 圆形感光尺寸，聚焦 纳米级空间分辨率（突破常规探测器的微区探测极限）。
SiC-180/200nm-2.5X2.5mm-AG8
2.5×2.5mm 方形光敏面，对应 φ6.25mm 圆形感光尺寸，平衡微区精度与能量采集效率。
SiC-180/200nm-5mm-AG8
5mm 圆形感光尺寸（φ19.6mm），主打 中等面积高效能量捕获，适配常规 VUV 测试场景。
SiC-180/200nm-5×5mm-AG8
5×5mm 方形光敏面，对应 φ25mm 圆形感光尺寸，聚焦 宽域 VUV 能量采集，突破常规探测面积限制。
SiC-180/200nm-9mm-AG8
9mm 圆形感光尺寸（φ63.5mm），实现 超大区域弱光信号收集，填补宽域低照度 VUV 探测空白。
SiC-AG Photodetector
聚焦工业级与科研级中紫外波段精准测量需求
材质赋能高稳定性
信号纯净抗干扰
增益灵活全场景适配
多场景兼容设计
长效可靠低维护
SiC-220/350nm-1 X 1mm-AG8
Mid-UV general model (220–350nm).
SiC-220/350nm-0.5×0.5mm-AG8
Micro-region detector (220–350nm)
SiC-220/350nm-2×2mm-AG8-L
Wide-area long-life model (220–350nm).
SiC-220/350nm-2×2mm-AG8
Wide-area strong-light model (220–350nm).
SiC-225/380nm-1×1mm-AG8
Long-wave extended model (225–380nm).
SiC-220/280nm-1×1mm-AG8
Deep-UV general model (220–280nm)
SiC-220/280nm-0.5×0.5mm-AG8
Deep-UV micro-region model (220–280nm).
GaN-AG Photodetector
Optoelectronic devices based on wide bandgap semiconductors.
- Full ultraviolet band coverage
- Flexible and adjustable gain
- High reliability and environmental adaptability
- Complete customization and supporting facilities
GaN-210/370nm-1 X 1mm-AG8
Light-sensitive range: 210~370nm.
GaN-210/370nm-0.5 X 0.5mm-AG8
<0.22mm ultra-small photosensitive surface, 210~370nm wavelength band.
GaN-210/370nm-2 X 2mm-AG8
感光面尺寸为φ4mm。
GaN-220/410nm-1 X 1mm-AG8
Light-sensitive range 220~410nm.
GaN-230/325nm-0.9 X 0.9mm-AG8
Light-sensitive range: 230~325nm.
GaN-225/290nm-1 X 1mm-AG8
Light-sensitive range 225~290nm.
GaN-290/440nm-1 X 1mm-AG8
Light-sensitive range: 290~440nm.
Si-30keV-AG X-Ray Detector
A dedicated radiation measurement device designed based on silicon (Si) material.
- Multi-ray compatibility
- High detection performance
- Vacuum environment adaptation
- Stable and durable
Si/InGaAs-Ps-S Photodetector
Constructed based on indium arsenide antimonide (InAsSb) material
- Ultra-high-speed response mechanism
- High-sensitivity detection capability
- Wide spectral adaptability
Si-0.4/0.9um-10G/40ps-S
Φ50um photosensitive size.
Si-0.4/0.9um-2.5G/130ps-S
Φ70um photosensitive size.
InGaAs-0.8/1.7um-2G/140ps-S
Φ120um photosensitive size.
InGaAs-0.8/1.7um-3G/120ps-S
Φ100um photosensitive size.
InGaAs-0.8/1.7um-6G/60ps-S
Φ50μm photosensitive size.
InGaAs-0.8/1.7um-20G/17ps-S
Φ45um photosensitive size.
InGaAs-0.4/1.7um-1G/250ps-S
Φ100um photosensitive size.
InGaAs-0.8/2.4um-1G/250ps-S
Φ100um photosensitive size.
InGaAs-1.5/3.6um-1G/250ps-S
Φ100um photosensitive size.
Si-PDA-Adj-G PHOTODETECTOR
Silicon-based amplifying photodetector
- Wide spectral coverage and strong silicon-based compatibility
- Enlarged design with outstanding low-light detection capability
- Adjustable gain + bandwidth adaptation for wide scene compatibility
- High compatibility + standardization for easy integration
Si-PDA-Fix-G PHOTODETECTOR
An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.
- Wide range of materials and spectral coverage
- Amplifying type + fixed gain design
- Balanced performance in both sensitivity and speed
- High compatibility and easy integration
- Strong scene adaptability
Si-DET-Bd-Hs PHOTODETECTOR
Silicon-based biased high-speed photoelectric conversion device
- Broad spectrum response adaptation
- High-speed response performance
- Low-noise and stable output
- Multiple coupling methods
- High compatibility
