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Near-infrared enhanced silicon PIN photodiode (COB package)
Silicon-based PIN structure photoelectric conversion devices optimized for response efficiency in the near-infrared band
- Enhanced near-infrared response
• Low dark current and high precision
• Resistance to basic environments
• Friendly to mass production costs
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Overview
Specifcations
Applications
Introduction:
This device has a spectral response range covering 350~1100nm, featuring both optimized near-infrared wavelength response and low dark current characteristics. It is suitable for photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.
It accurately converts near-infrared light signals into electrical signals, especially overcoming the shortcoming of ordinary silicon PIN photodiodes in their response to the near-infrared band, making them suitable for scenarios such as near-infrared detection, communication, and sensing.
Features:
- Wire bonding with low resistance and low loss
• Near-infrared custom anti-reflection coating to prevent stray light
• Multi-chip array with precise spacing control
• Package protective layer selected according to needs
• Low junction capacitance, suitable for high-frequency signals
• Low temperature drift to ensure data consistency
Dimension:
