Low Dark Current Silicon PIN Photodiode (DIP package)

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基于硅基 PIN 结构的高精度光探测器件

  • 封装适配性强
  • 暗电流极低
  • 环境耐受性优
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Overview
Specifcations
Applications

Introduction:

Low dark current Si photodiodes (DIP package) have a spectral response range of 350~1060nm, along with extremely low dark current and low junction capacitance characteristics. They can be widely used in photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.

Adopting a dual in-line package structure, they are compatible with standard slots of industrial equipment PCB boards and support direct insertion welding. For later maintenance, they can be individually plugged and replaced without desoldering the entire board, which significantly reduces maintenance costs and time, and is suitable for large-scale industrial mass production and equipment iteration.


Features:

  • Extremely low dark current, advantage in weak light detection
  • DIP package: industrial adaptation and convenient maintenance
  • 350~1060nm wide spectrum, covering multiple scenarios
  • Industrial-grade reliability


Dimension:



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Low Dark Current Silicon PIN Photodiode (DIP Package)

PDCD07-001
2.6×2.6mm 方形感光面。
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Low Dark Current Silicon PIN Photodiode (DIP package)

PDCD10-001
3.2×3.2mm 方形感光面。
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Low Dark Current Silicon PIN Photodiode (DIP package)

PDCD10-201
3.2×3.2mm 方形感光面,近红外优化。
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Low Dark Current Silicon PIN Photodiode (DIP package)

PDCD34-101
5.8×5.8mm 方形感光面。
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Low Dark Current Silicon PIN Photodiode (DIP package)

PDCD100-101
10×10mm 方形感光面。
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