| 数量 | 价格(USD) | 发货日期 |
|---|---|---|
| 1-10 | 待定 | |
| 10- | 待定 |
注意：发货日期以上是因库存不足而调整的。
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Silicon PIN photodiode in the ultraviolet to near-infrared band
产品编号: PDCT06-F01
Compatible with mainstream industrial welding processes, with strong adaptability for mass production; stable detection in low-light environments (such as low-intensity ultraviolet 365nm light); anti-static interference capability meets the needs of industrial scenarios.
Suitable for optical analysis equipment, such as multi-band spectrometers (requiring simultaneous detection of ultraviolet 200nm, visible light 633nm, and near-infrared 1000nm light), and light intensity monitoring in industrial production lines (relying on anti-static and welding adaptability).
注意事项
- 产品图片仅供参考，并不代表所有产品。
已配置规格
| Package Type | TO5 | Photosensitive Area Size (mm) | 2.4×2.4 |
| Operating Temperature (℃) | -40 to +100 | Dark Current (Max, pA) | 60 |
| Junction Capacitance (pF) | 75 | Rise Time (μs) | 0.16 |
浏览全部型号
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT01-F01
Spectral response: 190~1100nm, captures light across UV to near-infrared.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCT25-F01
190~1100nm wide spectral response, high conversion efficiency at near-IR.
Silicon PIN photodiode in the ultraviolet to near-infrared band
PDCD06-F01
No UV-NIR response gap, strong full-wavelength adaptability.
