Silicon PIN photodiode in the ultraviolet to near-infrared band

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A broad-spectrum photoelectric conversion device whose spectral response covers the ultraviolet to near-infrared bands.

  • Accurate broadband response
  • Low dark current with PIN structure
  • High photoelectric linearity
  • Stable environmental adaptability
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Overview
Specifcations
Applications

Introduction:

This device has a spectral response range of 190~1100nm, featuring low dark current, high sensitivity, and optimized full-wavelength response from ultraviolet to infrared, and is suitable for optical power detection and optical analysis equipment.

It can achieve efficient and continuous photoelectric conversion in the wide wavelength range from ultraviolet to near-infrared without changing devices. Moreover, the I layer of the PIN junction ensures effective absorption of photons of various wavelengths, with no response gaps or sudden drops in efficiency.


Features:

  • Dual-band anti-reflection coating reduces light loss
    • Wide-band response with stable performance and no precision error
    • Some models come with calibration pins for sensitivity adjustment
    • Stable response without deviation across all bands in a wide temperature range
    • Low parasitic capacitance ensures stable conversion across all bands


Dimension:

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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCT01-F01
Spectral response: 190~1100nm, captures light across UV to near-infrared.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCT06-F01
Pectral response 190~1100nm, peak wavelength 1000nm, excellent near-infrared responsivity.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCT25-F01
190~1100nm wide spectral response, high conversion efficiency at near-IR.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCD06-F01
No UV-NIR response gap, strong full-wavelength adaptability.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCD25-F01
It has a large light absorption area and strong ability to capture weak light.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

PDCD100-F01
The size of the photosensitive surface is 10.0×10.0mm, and the light absorption is the maximum.
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