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Silicon PIN photodiode in the ultraviolet to near-infrared band

产品编号: PDCD06-F01

Operating temperature: -20~+80℃, suitable for consumer electronics and general industrial environments. The welding time is shorter than that of the TO series (10s), improving mass production efficiency; the number of pins is 2, the circuit connection is simple, no complex peripheral adaptation is required, and the research and development cycle is short.


It is applicable to the field of consumer electronics, such as ambient light sensors in mobile phones and tablets (relying on DIP packaging and low cost), and miniaturized optical power meters (relying on low dark current and medium and low frequency stability).

注意事项
  • 产品图片仅供参考,并不代表所有产品。

已配置规格

Package TypeDIPPhotosensitive Area Size (mm)2.4×2.4
Operating Temperature (℃)-20 to +80Dark Current (Max, pA)60
Junction Capacitance (pF)75Rise Time (μs)0.16
单价
总计
发货日期
待定
数量
数量 价格(USD)发货日期
1-10待定
10-待定
注意:发货日期以上是因库存不足而调整的。

浏览全部型号

Silicon PIN photodiode in the ultraviolet to near-infrared band

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Spectral response: 190~1100nm, captures light across UV to near-infrared.
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Pectral response 190~1100nm, peak wavelength 1000nm, excellent near-infrared responsivity.
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Silicon PIN photodiode in the ultraviolet to near-infrared band

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190~1100nm wide spectral response, high conversion efficiency at near-IR.
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