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Optoelectronic conversion device with TO transistor package and metal hermetic sealing
TO-packaged ultraviolet-enhanced Si photodiodes with a spectral response of 250~1060nm, low dark current, low junction capacitance, and optimized ultraviolet response, suitable for optical power detection and optical analysis equipment.
It efficiently captures ultraviolet light signals while being compatible with the inherent near-infrared band (700~1100nm) response capability of silicon-based devices, meeting the requirements of direct plug-in circuit installation in industrial, laboratory and other scenarios.