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SiC-EUV-AG Photodetector

Part Number: SiC-5/125nm-5×5mm-AG8

Applicable to EUV lithography exposure dose monitoring (large-area uniform radiation measurement) and plasma diagnostics (capturing transient high-intensity radiation);


The high-flux radiation resistance characteristic of SiC ensures a long service life, and its 8-level adjustable gain covers the full-scenario range from "weak signal analysis" to "strong pulse quantification".

Caution
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Configured Specifications

Photosensitive Sizeφ25mmResponse Time Constant<2uS
Outline Dimensions50mm X 38.9mm X 70mmNet Weight of the Detector0.10kg
Unit Price
Total
Ship Date
TBD
Qty.
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

SiC-EUV-AG Photodetector

SiC-5/125nm-2.5 X 2.5mm-AG8
2.5×2.5mm square photosensitive area (equivalent photosensitive diameter φ6.25mm), focusing on sub-millimeter-level spatial resolution.
Ships as soon as Same Day
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SiC-EUV-AG Photodetector

SiC-5/125nm-5mm-AG8
5mm circular photosensitive area (diameter φ19.6mm), balancing energy collection and spatial precision.
Ships as soon as Same Day
Stock Items Included

SiC-EUV-AG Photodetector

SiC-5/125nm-9mm-AG8
9mm circular photosensitive area (diameter φ64mm), focusing on ultra-wide-range low-light collection.
Ships as soon as Same Day
Stock Items Included
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