SiC-EUV-AG Photodetector

Solid-State Integrated EUV Detection Solution

Fundamental Advantages Empowered by Wide-Bandgap Materials
Precise Response Capability in the EUV Band
Functional Upgrade of AG (Enhanced Gain)
Stable Adaptability to Extreme Environments

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Data Sheet

Overview

Introduction:

SiC-EUV-AG is a SiC-based extreme ultraviolet photodetector covering the 5–125nm EUV wavelength range. It integrates 8-level adjustable gain, is equipped with a vacuum flange for high vacuum compatibility, and features high-flux radiation tolerance, low dark current, and visible-blind characteristics, precisely suited for extreme ultraviolet measurement scenarios.

Features:

High stability, long service life, and resistance to high-flux EUV radiation;
Visible-blind, low dark current;
High responsivity at 13.5nm EUV wavelength;
Vacuum flange structure, compatible with high vacuum levels;
Excellent performance, high cost-effectiveness, and comprehensive technical support;
Non-standard customization services are available.

Dimension:

Specifications

SiC-EUV-AG Series Specifications Sheet

Product Model	SiC-EUV-AG
Spectral Response Range	5nm–125nm
Responsivity (@13.5nm)	58mA/W
Gain Range	High-Z Load: 1.51 kV/A to 4.75 MV/A; 50Ω Load: 0.75 kV/A to 2.38 MV/A
Signal Amplitude	High-Z Load: 0V–10V; 50Ω Load: 0–5 V
Gain Adjustment Method	Rotary step adjustment: 0–70 dB, 10 dB per step, 8 steps total. Bandwidth is inversely proportional to gain.
Operating Temperature	-20°C to 80°C
Storage Temperature	-55°C to 90°C
Signal Interface	SMA Connector

Adjustable Gain Parameters

Detailed Adjustable Gain Specifications Sheet

	0dB	10dB	20dB	30dB
Gain (Hi-Z)	1.51×10³ V/A	4.75×10³ V/A	1.5×10⁴ V/A	4.75×10⁴ V/A
Gain (50Ω)	0.75×10³ V/A	2.38×10³ V/A	0.75×10⁴ V/A	2.38×10⁴ V/A
Bandwidth (BW)	12MHz	1.6MHz	1MHz	260kHz
Noise (RMS)	258μV	192μV	207μV	211μV
	40dB	50dB	60dB	70dB
Gain (Hi-Z)	1.51×10⁵ V/A	4.75×10⁵ V/A	1.5×10⁵ V/A	4.75×10⁶ V/A
Gain (50Ω)	0.75×10⁵ V/A	2.38×10⁵ V/A	0.75×10⁶ V/A	2.38×10⁶ V/A
Bandwidth (BW)	90kHz	28kHz	9kHz	3kHz
Noise (RMS)	214μV	234μV	277μV	388μV
Signal Offset	±8mV(Typ.) ，±12mV(Max)