SiC-EUV-AG Photodetector
Solid-State Integrated EUV Detection Solution
- Fundamental Advantages Empowered by Wide-Bandgap Materials
- Precise Response Capability in the EUV Band
- Functional Upgrade of AG (Enhanced Gain)
- Stable Adaptability to Extreme Environments
SiC-5/125nm-2.5 X 2.5mm-AG8
2.5×2.5mm square photosensitive area (equivalent photosensitive diameter φ6.25mm), focusing on sub-millimeter-level spatial resolution.
SiC-5/125nm-5mm-AG8
5mm circular photosensitive area (diameter φ19.6mm), balancing energy collection and spatial precision.
SiC-5/125nm-5×5mm-AG8
5×5mm square photosensitive area (diameter φ25mm), focusing on wide-range energy capture.
SiC-5/125nm-9mm-AG8
9mm circular photosensitive area (diameter φ64mm), focusing on ultra-wide-range low-light collection.
SiC-VUV-AG Photodetector
Professional-grade Detection Benchmark for the VUV Band
- Material and Stability
- Anti-interference and Signal Purity
- Flexible Gain Adaptation
- Environmental Compatibility
- Performance and Services
SiC-180/200nm-1 X 1mm-AG8
1×1mm square photosensitive surface, matching the φ1mm circular photosensitive dimension, focuses on nanoscale spatial resolution (breaking through the micro-region detection limit of conventional detectors).
SiC-180/200nm-2.5X2.5mm-AG8
2.5×2.5mm square photosensitive surface, corresponding to a φ6.25mm circular photosensitive dimension, balances micro-region precision and energy collection efficiency.
SiC-180/200nm-5mm-AG8
5mm circular photosensitive dimension (diameter φ19.6mm), focusing on high-efficiency energy capture over a medium area, and suitable for conventional VUV testing scenarios.
SiC-180/200nm-5×5mm-AG8
5×5mm square photosensitive surface, corresponding to a φ25mm circular photosensitive dimension, focusing on wide-range VUV energy collection and breaking through the conventional detection area limit.
SiC-180/200nm-9mm-AG8
9mm circular photosensitive dimension (diameter φ63.5mm), enabling ultra-large-area low-light signal collection and filling the gap in wide-range low-illuminance VUV detection.
SiC-AG Photodetector
Focus on industrial & research mid-UV accurate measurement needs
- Material-Enabled High Stability
- Pure Signal and Anti-Interference
- Flexible Gain for Full-Scenario Adaptation
- Multi-Scenario Compatible Design
- Long-Term Reliability and Low Maintenance
SiC-220/350nm-1 X 1mm-AG8
Mid-UV general model (220–350nm).
SiC-220/350nm-0.5×0.5mm-AG8
Micro-region detector (220–350nm)
SiC-220/350nm-2×2mm-AG8-L
Wide-area long-life model (220–350nm).
SiC-220/350nm-2×2mm-AG8
Wide-area strong-light model (220–350nm).
SiC-225/380nm-1×1mm-AG8
Long-wave extended model (225–380nm).
SiC-220/280nm-1×1mm-AG8
Deep-UV general model (220–280nm).
SiC-220/280nm-0.5×0.5mm-AG8
Deep-UV micro-region model (220–280nm).
GaN-AG Photodetector
Optoelectronic devices based on wide bandgap semiconductors
- Full ultraviolet band coverage
- Flexible and adjustable gain
- High reliability and environmental adaptability
- Complete customization and supporting facilities
GaN-210/370nm-1 X 1mm-AG8
Light-sensitive range: 210~370nm.
GaN-210/370nm-0.5 X 0.5mm-AG8
<0.22mm ultra-small photosensitive surface, 210~370nm wavelength band.
GaN-210/370nm-2 X 2mm-AG8
The size of the photosensitive surface is φ4mm.
GaN-220/410nm-1 X 1mm-AG8
Light-sensitive range 220~410nm.
GaN-230/325nm-0.9 X 0.9mm-AG8
Light-sensitive range: 230~325nm.
GaN-225/290nm-1 X 1mm-AG8
Light-sensitive range 225~290nm.
GaN-290/440nm-1 X 1mm-AG8
Light-sensitive range: 290~440nm.
Si-30keV-AG X-Ray Detector
A dedicated radiation measurement device designed based on silicon (Si) material.
- Multi-ray compatibility
- High detection performance
- Vacuum environment adaptation
- Stable and durable
Si/InGaAs-Ps-S Photodetector
Constructed based on indium arsenide antimonide (InAsSb) material
- Ultra-high-speed response mechanism
- High-sensitivity detection capability
- Wide spectral adaptability
Si-0.4/0.9um-10G/40ps-S
Φ50um photosensitive size.
Si-0.4/0.9um-2.5G/130ps-S
Φ70um photosensitive size.
InGaAs-0.8/1.7um-2G/140ps-S
Φ120um photosensitive size.
InGaAs-0.8/1.7um-3G/120ps-S
Φ100um photosensitive size.
InGaAs-0.8/1.7um-6G/60ps-S
Φ50μm photosensitive size.
InGaAs-0.8/1.7um-20G/17ps-S
Φ45um photosensitive size.
InGaAs-0.4/1.7um-1G/250ps-S
Φ100um photosensitive size.
InGaAs-0.8/2.4um-1G/250ps-S
Φ100um photosensitive size.
InGaAs-1.5/3.6um-1G/250ps-S
Φ100um photosensitive size.
Si-PDA-Adj-G Photodetector
Silicon-based amplifying photodetector
- Wide spectral coverage and strong silicon-based compatibility
- Enlarged design with outstanding low-light detection capability
- Adjustable gain + bandwidth adaptation for wide scene compatibility
- High compatibility + standardization for easy integration
Si-PDA-Fix-G Photodetector
An amplifying optoelectronic device made of silicon as the detection material, specially designed for the ultraviolet to visible light band.
- Wide range of materials and spectral coverage
- Amplifying type + fixed gain design
- Balanced performance in both sensitivity and speed
- High compatibility and easy integration
- Strong scene adaptability
Si-DET-Bd-Hs PHOTODETECTOR
Silicon-based biased high-speed photoelectric conversion device
- Broad spectrum response adaptation
- High-speed response performance
- Low-noise and stable output
- Multiple coupling methods
- High compatibility
