SiC-VUV-AG Photodetector

Suitable for nanoscale defect detection in VUV lithography masks (capturing sub - micrometer - level defect signals) and single - molecule layer surface analysis (enabling high - resolution analysis of the interaction between VUV light and ultra - thin samples);

Leveraging the SiC - based low dark current characteristic, its 8 - level gain precisely amplifies extremely weak VUV signals. The vacuum flange is compatible with a high - vacuum environment (≤10⁻⁴ Pa), ensuring ultra - high - precision measurements free from interference by residual gases.