M Plan Apo NIR Series Objectives

NA is increased to 0.55, breaking through the 0.5μm resolution, capable of distinguishing quantum dots and semiconductor defects; the 13mm working distance supports fine adjustment of the stage, adapting to near-infrared microscopy for glass impurities and interlayer defects in thin films.

Applied to:

Near-infrared fluorescent organelle observation, photovoltaic film defect localization, and nanoparticle size analysis.