M Plan Apo NIR HR Series Objectives

NA=0.6+HR design, breaking through the near-infrared diffraction limit, capable of resolving submicron circuits on silicon wafers and deep biological blood vessels; a 9.5mm working distance balances high resolution and operability, suitable for failure analysis of semiconductor chips (such as gold wire bonding defects).

Applied to:
High-resolution detection of semiconductor circuits, NIR imaging of cerebral cortical blood vessels, and quantum well luminescence analysis.