M Plan Apo NUV HR Series Objectives

HR version NA 0.8, optimized for 355nm, with a resolution of 0.3μm (near the diffraction limit), capable of distinguishing submicron structures such as chip nanocircuits. The short working distance of 1.6mm is a compromise for high NA, suitable for ultra-fine observation of fixed samples such as semiconductor wafer defect re-judgment and laser processing endpoint detection.

Applied in:
Detection of advanced semiconductor processes (such as circuits below 7nm), verification of "endpoint accuracy" in laser micro-nano processing.