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Low Dark Current Silicon PIN Photodiode (DIP Package)

Part Number: PDCD10-201

Optimized for a peak wavelength of 800nm, the near-infrared band (760~1060nm) is suitable for detection scenarios dominated by near-infrared; the peak optimization compensates for the weak near-infrared response of ordinary models.


It can directly replace the latter to adapt to near-infrared equipment without adjusting the circuit or optical structure.

Images are for display purposes only.

Specifications

Photosensitive Area Size (with Shape)Dark Current (Typ./Max., pA)Junction Capacitance (Typ., pF)Rise Time (Typ., μs)Shunt Resistance (Min., GΩ)Equivalent Noise Power (Typ., W/Hz¹/²)
3.2×3.2mm (Square)3.5/20115 0.2534.6×10⁻¹⁵
Unit Price
Total
Ship Date
TBD
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Model
Photosensitive Area Size (with Shape)
Rise Time (Typ., μs)
Junction Capacitance (Typ., pF)
Shunt Resistance (Min., GΩ)
Dark Current (Typ./Max., pA)
Equivalent Noise Power (Typ., W/Hz¹/²)
Action
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