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Low Dark Current Silicon PIN Photodiode (DIP Package)

Part Number: PDCD34-101

Light-sensitive area: 33.64mm², with high light absorption efficiency, capable of capturing extremely weak large-area scattered light at the μW level; large-size products still use through-hole packaging, making later maintenance, insertion, removal and replacement convenient without the need to desolder the entire board.


Wide operating temperature range (-20~+80℃), low dark current drift coefficient at high temperatures, suitable for complex environments such as industrial workshops and outdoors.

Images are for display purposes only.

Specifications

Photosensitive Area Size (with Shape)Dark Current (Typ./Max., pA)Junction Capacitance (Typ., pF)Rise Time (Typ., μs)Shunt Resistance (Min., GΩ)Equivalent Noise Power (Typ., W/Hz¹/²)
5.8×5.8mm (Square)5/304000.925.5×10⁻¹⁵
Unit Price
Total
Ship Date
TBD
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Model
Photosensitive Area Size (with Shape)
Rise Time (Typ., μs)
Junction Capacitance (Typ., pF)
Shunt Resistance (Min., GΩ)
Dark Current (Typ./Max., pA)
Equivalent Noise Power (Typ., W/Hz¹/²)
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