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Low Dark Current Silicon PIN Photodiode (DIP package)

High-precision photodetection device based on silicon-based PIN structure

  • Strong encapsulation adaptability
  • Extremely low dark current
  • Excellent environmental tolerance
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Data Sheet

Overview

Introduction:

Low dark current Si photodiodes (DIP package) have a spectral response range of 350~1060nm, along with extremely low dark current and low junction capacitance characteristics. They can be widely used in photoelectric measurement instruments, optical analysis equipment, and optical power monitoring scenarios.

Adopting a dual in-line package structure, they are compatible with standard slots of industrial equipment PCB boards and support direct insertion welding. For later maintenance, they can be individually plugged and replaced without desoldering the entire board, which significantly reduces maintenance costs and time, and is suitable for large-scale industrial mass production and equipment iteration.


Features:

  • Extremely low dark current, advantage in weak light detection
  • DIP package: industrial adaptation and convenient maintenance
  • 350~1060nm wide spectrum, covering multiple scenarios
  • Industrial-grade reliability


Dimension:



Specifications

Applications

Serivce & Support

Explore Series

Model
Photosensitive Area Size (with Shape)
Rise Time (Typ., μs)
Junction Capacitance (Typ., pF)
Shunt Resistance (Min., GΩ)
Dark Current (Typ./Max., pA)
Equivalent Noise Power (Typ., W/Hz¹/²)
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