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Near-Infrared Enhanced Silicon PIN Photodiode (COB Package)

Part Number: PDCC34-501

It has better low-light detection accuracy, suitable for detecting extremely weak light signals at the μW level; it has a faster high-frequency response speed, capable of capturing pulsed near-infrared signals below 1MHz (such as infrared remote control coding, short-distance infrared communication feedback).



It has strong versatility in the medium and short near-infrared range, and can be adapted to multiple near-infrared detection scenarios without replacing components.

Images are for display purposes only.

Specifications

Photosensitive Area Size (mm)Window Material Dark Current (V_R=10mV, Typ./Max., pA)Photosensitivity (Typ., A/W)Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
5.8×5.8Resin60/3600.43@633nm, 0.62@920nm400/5000.9
Unit Price
Total
Ship Date
TBD
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Model
Photosensitivity (Typ., A/W)
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)
Photosensitive Area Size (mm)
Window Material
Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
Dark Current (V_R=10mV, Typ./Max., pA)
Action
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