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Near-Infrared Enhanced Silicon PIN Photodiode (COB Package )

Part Number: PDCC100-501

It has outstanding large-area detection capability and is suitable for scenarios requiring large-scale optical signal collection, such as "greenhouse environmental light intensity monitoring and large optical analysis equipment"; the long near-infrared range has strong pertinence and is a dedicated choice for industrial 1064nm laser power monitoring and long-distance infrared sensing.


It has higher environmental durability and can operate stably in industrial environments with high humidity (10%~90% RH) or slight dust without additional protection.

Images are for display purposes only.

Specifications

Photosensitive Area Size (mm)Window Material Dark Current (V_R=10mV, Typ./Max., pA)Photosensitivity (Typ., A/W)Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
10×10Resin150/9000.24@1064nm1000/12002.2
Unit Price
Total
Ship Date
TBD
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Model
Photosensitivity (Typ., A/W)
Junction Capacitance (f=100kHz,V_R=0V, Typ./Max., pF)
Photosensitive Area Size (mm)
Window Material
Rise Time (R_L=1kΩ,V_R=0V, Typ., μs)
Dark Current (V_R=10mV, Typ./Max., pA)
Action
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