| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | TBD | |
| 10- | TBD |
NOTE : Ship Dates above are subject to change depending upon availability.

High photosensitive area and adaptation to specific wavelengths: A larger photosensitive surface can receive more near-infrared light, making it suitable for scenarios requiring high light flux or detection of specific long-wavelength near-infrared rays.
High potential for photocurrent output: A larger photosensitive area combined with a light response adapted to 1064nm can output a larger photocurrent under the same light intensity, reducing the design difficulty of subsequent signal amplification circuits.
| Photosensitive Area Size | 10×10mm | Rise Time (tr) | 150μs |
| Junction Capacitance (Cj, VR=10mV) | 900pF | Maximum Dark Current (ID, VR=0V) | 1.8pA |
| Peak Responsivity Wavelength & Photoresponse | 1064nm (0.26A/W) | Noise Equivalent Power (NEP) | 2.5×10⁻¹⁴ W/Hz¹/² |
| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | TBD | |
| 10- | TBD |