High photosensitive area and adaptation to specific wavelengths: A larger photosensitive surface can receive more near-infrared light, making it suitable for scenarios requiring high light flux or detection of specific long-wavelength near-infrared rays.
High potential for photocurrent output: A larger photosensitive area combined with a light response adapted to 1064nm can output a larger photocurrent under the same light intensity, reducing the design difficulty of subsequent signal amplification circuits.
| Photosensitive Area Size | Rise Time (tr) | Junction Capacitance (Cj, VR=10mV) | Maximum Dark Current (ID, VR=0V) | Peak Responsivity Wavelength & Photoresponse | Noise Equivalent Power (NEP) |
|---|---|---|---|---|---|
| 10×10mm | 150μs | 900pF | 1.8pA | 1064nm (0.26A/W) | 2.5×10⁻¹⁴ W/Hz¹/² |
| Quantity | Price(USD) | Ship Date |
|---|---|---|
| 1-10 | TBD | |
| 10- | TBD |
