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Near-infrared enhanced silicon PIN photodiode (DIP package)

Part Number: PDCD100-501

High photosensitive area and adaptation to specific wavelengths: A larger photosensitive surface can receive more near-infrared light, making it suitable for scenarios requiring high light flux or detection of specific long-wavelength near-infrared rays.



High potential for photocurrent output: A larger photosensitive area combined with a light response adapted to 1064nm can output a larger photocurrent under the same light intensity, reducing the design difficulty of subsequent signal amplification circuits.

Caution
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Configured Specifications

Photosensitive Area Size10×10mmRise Time (tr)150μs
Junction Capacitance (Cj, VR=10mV)900pFMaximum Dark Current (ID, VR=0V)1.8pA
Peak Responsivity Wavelength & Photoresponse1064nm (0.26A/W)Noise Equivalent Power (NEP)2.5×10⁻¹⁴ W/Hz¹/²
Unit Price
Total
Ship Date
TBD
Qty.
Quantity Price(USD)Ship Date
1-10TBD
10-TBD
NOTE : Ship Dates above are subject to change depending upon availability.

Explore Series

Near-Infrared Enhanced Silicon PIN Photodiode (DIP Package)

PDCD34-501
The size of the photosensitive surface is 5.8×5.8 mm, and it has high near-infrared detection efficiency.
Ships as soon as Same Day
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